<p>Semiconductor pixel detectors are widely used in various applications, many of which require sustained stability of detector performance over extended operation periods. However, both irreversible and temporary degradations can impact detector performance during prolonged use. Therefore, continual monitoring of detector performance, which is susceptible to degradation effects, is necessary. This paper presents a cost-effective procedure for real-time monitoring and periodic inspection of pixel detectors during extended operation. The real-time monitoring method tracks the charge drifting process without introducing additional background by using cosmic muons to identify temporary effects caused by changes in operating conditions, such as ambient temperature fluctuations. In contrast, the offline inspection periodically evaluates per-pixel spectral characteristics, including baseline and gain, using simple radioactive sources to assess the extent of irreversible degradation. The proposed monitoring procedure is validated on a Timepix3 detector equipped with a CdTe sensor, demonstrating its effectiveness.</p>

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Performance monitoring of semiconductor pixel detectors during long-term operation

  • Huai-Zhong Gao,
  • Xu-Tao Zheng,
  • Jia-Xing Wen,
  • Qi-Dong Wang,
  • Ge Ma,
  • Yu-Ge Zhang,
  • Xiao-Fan Pan,
  • Chen Li,
  • Ming Zeng,
  • Ming-Hai Yu,
  • Si-Xin Wu,
  • Yue Yang,
  • Zong-Qing Zhao,
  • Li-Ye Liu,
  • Heng-Guan Yi,
  • San-Qiang Xia

摘要

Semiconductor pixel detectors are widely used in various applications, many of which require sustained stability of detector performance over extended operation periods. However, both irreversible and temporary degradations can impact detector performance during prolonged use. Therefore, continual monitoring of detector performance, which is susceptible to degradation effects, is necessary. This paper presents a cost-effective procedure for real-time monitoring and periodic inspection of pixel detectors during extended operation. The real-time monitoring method tracks the charge drifting process without introducing additional background by using cosmic muons to identify temporary effects caused by changes in operating conditions, such as ambient temperature fluctuations. In contrast, the offline inspection periodically evaluates per-pixel spectral characteristics, including baseline and gain, using simple radioactive sources to assess the extent of irreversible degradation. The proposed monitoring procedure is validated on a Timepix3 detector equipped with a CdTe sensor, demonstrating its effectiveness.