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<p>Extreme ultraviolet (EUV) lithography is crucial for advancing semiconductor manufacturing; however, current EUV light sources, such as laser-produced plasma (LPP), have significant limitations, including low energy-conversion efficiency and debris contamination. Various schemes, including optical free-electron laser undulators, have been studied to generate coherent EUV light. However, optical undulators suffer from limited focal lengths, which pose a significant challenge&#xa0;to&#xa0;achieving a higher gain. In this study, a novel approach is proposed that employs a stretched off-axis paraboloid (sOAP) mirror, thus extending the focus distance to the centimeter range while achieving a well-controlled periodic light field. This enables high-intensity 92-eV EUV sources to exceed <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="41365_2025_1755_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="29" /> </InlineMediaObject> <EquationSource Format="TEX">\(10^{16}\)</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mn>10</mn> <mn>16</mn> </msup> </math></EquationSource> </InlineEquation>/s, as demonstrated in the simulations. The proposed setup provides an efficient and powerful solution for advanced applications including semiconductor lithography.</p>

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Coherent Compton scattering using a stretched off-axis paraboloid

  • 期刊论文

  • 发表日期：

    2025年6月26日

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  • Kai Zhao,
  • Chang-Bo Fu,
  • Xiang-Jin Kong,
  • Yu-Gang Ma

摘要

Extreme ultraviolet (EUV) lithography is crucial for advancing semiconductor manufacturing; however, current EUV light sources, such as laser-produced plasma (LPP), have significant limitations, including low energy-conversion efficiency and debris contamination. Various schemes, including optical free-electron laser undulators, have been studied to generate coherent EUV light. However, optical undulators suffer from limited focal lengths, which pose a significant challenge to achieving a higher gain. In this study, a novel approach is proposed that employs a stretched off-axis paraboloid (sOAP) mirror, thus extending the focus distance to the centimeter range while achieving a well-controlled periodic light field. This enables high-intensity 92-eV EUV sources to exceed \(10^{16}\) 10 16 /s, as demonstrated in the simulations. The proposed setup provides an efficient and powerful solution for advanced applications including semiconductor lithography.