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<p>The performance of graphene nanoribbon field-effect transistors is fundamentally limited by the thermionic subthreshold swing (SS ≈ 60 mV/dec) and a trade-off between switching steepness and high-frequency operation. This work demonstrates that strategic geometric patterning of armchair GNRs is a powerful strategy to overcome these barriers. By designing width-modulated, wide-narrow-wide constrictions, we engineer quantum confinement to create energy-filtering and resonant tunneling pathways. Simulations using the Kwant code reveal that these patterned devices achieve a sub-thermal SS of ~40 mV/dec and a cutoff frequency approaching 10 THz concurrently—a combination surpassing the capabilities of pristine, uniform-channel devices. The patterning creates transport mini-gaps that suppress subthreshold leakage while enabling efficient on-state conduction via sharp resonances. A fin-enhanced variant further optimizes performance, whereas devices with edge defects show significant degradation, underscoring the critical importance of edge integrity. These results establish top-down geometric patterning as a viable and scalable pathway to break the traditional speed-power trade-off, advancing the development of graphene transistors for next-generation ultra-low-power and terahertz-speed electronics.</p>

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Geometric Patterning of Graphene Nanoribbons for Sub-thermal Switching and Terahertz Transistor Operation

  • 期刊论文

  • 发表日期：

    2026年4月29日

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  • Ramin Nouribayat,
  • Abdollah Abbasi,
  • Mansun Chan

摘要

The performance of graphene nanoribbon field-effect transistors is fundamentally limited by the thermionic subthreshold swing (SS ≈ 60 mV/dec) and a trade-off between switching steepness and high-frequency operation. This work demonstrates that strategic geometric patterning of armchair GNRs is a powerful strategy to overcome these barriers. By designing width-modulated, wide-narrow-wide constrictions, we engineer quantum confinement to create energy-filtering and resonant tunneling pathways. Simulations using the Kwant code reveal that these patterned devices achieve a sub-thermal SS of ~40 mV/dec and a cutoff frequency approaching 10 THz concurrently—a combination surpassing the capabilities of pristine, uniform-channel devices. The patterning creates transport mini-gaps that suppress subthreshold leakage while enabling efficient on-state conduction via sharp resonances. A fin-enhanced variant further optimizes performance, whereas devices with edge defects show significant degradation, underscoring the critical importance of edge integrity. These results establish top-down geometric patterning as a viable and scalable pathway to break the traditional speed-power trade-off, advancing the development of graphene transistors for next-generation ultra-low-power and terahertz-speed electronics.