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<p>CuSn10–IN718 multi-material structures were fabricated by laser-directed energy deposition (L-DED) to evaluate interfacial bonding mechanisms and the resulting thermal, electrical, and mechanical responses. The CuSn10–IN718 interface exhibited metallurgical continuity without continuous interfacial delamination, although localized microcracks and CuSn10 infiltration were observed near the IN718-side fusion region. SEM–EDS analysis revealed elemental redistribution across the transition zone, with Mo and Nb enrichment and substantial Cu–Ni–Fe–Cr intermixing. TEM–EDS analysis identified compositionally distinct Cu-rich, Ni-rich, Ni–Cu–Sn-rich, and Cr-enriched regions, which were attributed to Marangoni-driven melt-pool convection, solute partitioning, heterogeneous nucleation, and non-equilibrium solidification. EBSD analysis showed predominantly equiaxed α-Cu(Sn) grains in the CuSn10 region, columnar γ-FCC grains in the IN718 region, and mixed refined grains within the transition zone. The interface also exhibited the highest average GND density, approximately 2.53 × 10<sup>13</sup> m<sup>−2</sup>, which contributed to dislocation strengthening. Nanoindentation identified the presence of a heterogeneous strengthening zone at the interface, where nano-hardness and elastic modulus increased by 31.23% and 30.68%, respectively, relative to CuSn10. Under compression, the CuSn10–IN718 specimen reached a 0.2% offset yield strength of 291.95&#xa0;MPa, which was 41.9% lower than IN718 but 16.0% higher than CuSn10. Thermal conductivity of the multi-material specimen reached 20.36–25.49&#xa0;W&#xa0;m<sup>−1</sup>&#xa0;K<sup>−1</sup>, approximately 2.02–2.14 times higher than IN718 but lower than CuSn10. Electrical resistivity decreased by 38.5% relative to IN718, corresponding to approximately 1.62 times higher electrical conductivity. In addition, the Seebeck coefficient increased to 6.18 ± 0.42 µV&#xa0;K<sup>−1</sup>, approximately 1.44 times higher than IN718, while the power factor increased to 0.585 ± 0.13 µW&#xa0;K<sup>−2</sup>&#xa0;cm<sup>−1</sup>, approximately 3.43 times higher than IN718. The results demonstrate that L-DED CuSn10–IN718 architectures provide a viable pathway for thermally enhanced, electrically modified, and compression-capable multi-material components.</p>

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Additive manufacturing of functional CuSn10–IN718 multi-material structure: thermal, electrical, and mechanical properties and bonding mechanisms

  • 期刊论文

  • 发表日期：

    2026年7月25日

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  • Manikanta Grandhi,
  • Aditya Nagaraj,
  • Fan Zhou,
  • Yulin Liu,
  • Cesar-Octavio Romo-De-La-Cruz,
  • Fuda Ning,
  • Xueyan Song,
  • Sangkee Min,
  • Zhichao Liu

摘要

CuSn10–IN718 multi-material structures were fabricated by laser-directed energy deposition (L-DED) to evaluate interfacial bonding mechanisms and the resulting thermal, electrical, and mechanical responses. The CuSn10–IN718 interface exhibited metallurgical continuity without continuous interfacial delamination, although localized microcracks and CuSn10 infiltration were observed near the IN718-side fusion region. SEM–EDS analysis revealed elemental redistribution across the transition zone, with Mo and Nb enrichment and substantial Cu–Ni–Fe–Cr intermixing. TEM–EDS analysis identified compositionally distinct Cu-rich, Ni-rich, Ni–Cu–Sn-rich, and Cr-enriched regions, which were attributed to Marangoni-driven melt-pool convection, solute partitioning, heterogeneous nucleation, and non-equilibrium solidification. EBSD analysis showed predominantly equiaxed α-Cu(Sn) grains in the CuSn10 region, columnar γ-FCC grains in the IN718 region, and mixed refined grains within the transition zone. The interface also exhibited the highest average GND density, approximately 2.53 × 1013 m−2, which contributed to dislocation strengthening. Nanoindentation identified the presence of a heterogeneous strengthening zone at the interface, where nano-hardness and elastic modulus increased by 31.23% and 30.68%, respectively, relative to CuSn10. Under compression, the CuSn10–IN718 specimen reached a 0.2% offset yield strength of 291.95 MPa, which was 41.9% lower than IN718 but 16.0% higher than CuSn10. Thermal conductivity of the multi-material specimen reached 20.36–25.49 W m−1 K−1, approximately 2.02–2.14 times higher than IN718 but lower than CuSn10. Electrical resistivity decreased by 38.5% relative to IN718, corresponding to approximately 1.62 times higher electrical conductivity. In addition, the Seebeck coefficient increased to 6.18 ± 0.42 µV K−1, approximately 1.44 times higher than IN718, while the power factor increased to 0.585 ± 0.13 µW K−2 cm−1, approximately 3.43 times higher than IN718. The results demonstrate that L-DED CuSn10–IN718 architectures provide a viable pathway for thermally enhanced, electrically modified, and compression-capable multi-material components.