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<p>The precise patterning of highly ordered organic semiconductor (OSC) thin-film arrays is paramount for advancing next-generation electronic devices. Herein, we report a ladder-like polysilsesquioxane (LPSQ) strategy to synthesize two functional analogs with tunable surface energies and robust dielectric properties. These LPSQ dielectrics, functionalized with alkyl or fluoroalkyl side chains, serve a dual role as both gate insulators and patterning layers to guide the blade-coating of 2,7-dioctyl[1]benzothieno[3,2-<i>b</i>][1]benzothiophene (C<sub>8</sub>-BTBT). This approach yields highly aligned arrays suitable for three-dimensional integration in flexible electronics. The synergistic combination of dense LPSQ dielectric packing and aligned semiconductor domains leads to excellent organic thin-film transistor (OTFT) performance, achieving an approximately four-fold improvement in field-effect mobility compared to conventional standard silicon oxide dielectrics. Moreover, the patterned LPSQ dielectrics enable high-resolution C<sub>8</sub>-BTBT patterning on plastic substrates, supporting the 4-inch-scale 3D integration of flexible logic circuits, including inverters (voltage gain &gt;100), NOR gates, and NAND gates.</p>

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Dual-function ladder polysilsesquioxanes for precise patterning and 3D integration of high-performance flexible organic logic circuits

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Xiaowu Tang,
  • Zengchao Zhang,
  • Xiangyang Li,
  • Qiancheng Zhao,
  • Hongwei Ge,
  • Qingqing Sun,
  • Shuai Zhang,
  • Bin Hu,
  • Lina Si,
  • Rixuan Wang,
  • Se Hyun Kim,
  • Takeo Minari,
  • Chuan Liu,
  • Miao Du,
  • Zhihong Zhang,
  • Xuying Liu

摘要

The precise patterning of highly ordered organic semiconductor (OSC) thin-film arrays is paramount for advancing next-generation electronic devices. Herein, we report a ladder-like polysilsesquioxane (LPSQ) strategy to synthesize two functional analogs with tunable surface energies and robust dielectric properties. These LPSQ dielectrics, functionalized with alkyl or fluoroalkyl side chains, serve a dual role as both gate insulators and patterning layers to guide the blade-coating of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT). This approach yields highly aligned arrays suitable for three-dimensional integration in flexible electronics. The synergistic combination of dense LPSQ dielectric packing and aligned semiconductor domains leads to excellent organic thin-film transistor (OTFT) performance, achieving an approximately four-fold improvement in field-effect mobility compared to conventional standard silicon oxide dielectrics. Moreover, the patterned LPSQ dielectrics enable high-resolution C8-BTBT patterning on plastic substrates, supporting the 4-inch-scale 3D integration of flexible logic circuits, including inverters (voltage gain >100), NOR gates, and NAND gates.