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<p>p-n heterojunction solar-blind photodetectors, based on p-type materials and n-type Ga<sub>2</sub>O<sub>3</sub>, have attracted significant attention in the optoelectronics field due to their inherent low dark current and self-powered operation. Among various constructions, organic-inorganic hybrid heterojunctions formed by integrating p-type organic materials with n-type Ga<sub>2</sub>O<sub>3</sub> offer a promising solution to overcome the lattice mismatch, opening new avenues for device performance breakthroughs. In this work, the Ga<sub>2</sub>O<sub>3</sub> thin films are treated via a supercritical fluid technique (SC), which significantly reduced defect state density while improving crystallinity and surface uniformity of films, thereby laying a crucial foundation for heterojunction interface optimization. Simultaneously, a self-assembled monolayer (SAM) was introduced at the organic-inorganic heterojunction interface. Notably, the high-quality Ga<sub>2</sub>O<sub>3</sub> surface engineered via the supercritical fluid treatment facilitated the highly efficient, oriented self-assembly of SAM molecules, enabling precise modulation of the interfacial energy band alignment and promoting the separation and transport dynamics of photogenerated carriers. Benefiting from the synergistic effects of supercritical fluid modification and SAM functionalization, the fabricated solar-blind photodetector achieves a highest responsivity of 111.7 mA/W and a specific detectivity of 1.02 × 10<sup>11</sup> Jones under zero bias (self-powered mode) and weak 254 nm light with an intensity of 5 µW/cm<sup>2</sup>.</p>

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Boosting interface band alignment via synergistic supercritical fluid post-treatment and SAM functionalization for Ga2O3-hybrid solar-blind detectors

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Yingjian Shi,
  • Xin Huang,
  • Wentao Zhao,
  • Xingxing Li,
  • Haoran Wang,
  • Hao Zhu,
  • Kangkang Niu,
  • Wei Han,
  • Jun Zhang,
  • Li Tao,
  • Hao Wang

摘要

p-n heterojunction solar-blind photodetectors, based on p-type materials and n-type Ga2O3, have attracted significant attention in the optoelectronics field due to their inherent low dark current and self-powered operation. Among various constructions, organic-inorganic hybrid heterojunctions formed by integrating p-type organic materials with n-type Ga2O3 offer a promising solution to overcome the lattice mismatch, opening new avenues for device performance breakthroughs. In this work, the Ga2O3 thin films are treated via a supercritical fluid technique (SC), which significantly reduced defect state density while improving crystallinity and surface uniformity of films, thereby laying a crucial foundation for heterojunction interface optimization. Simultaneously, a self-assembled monolayer (SAM) was introduced at the organic-inorganic heterojunction interface. Notably, the high-quality Ga2O3 surface engineered via the supercritical fluid treatment facilitated the highly efficient, oriented self-assembly of SAM molecules, enabling precise modulation of the interfacial energy band alignment and promoting the separation and transport dynamics of photogenerated carriers. Benefiting from the synergistic effects of supercritical fluid modification and SAM functionalization, the fabricated solar-blind photodetector achieves a highest responsivity of 111.7 mA/W and a specific detectivity of 1.02 × 1011 Jones under zero bias (self-powered mode) and weak 254 nm light with an intensity of 5 µW/cm2.