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<p>Perovskite photolithography, an emerging research frontier, combines the unique properties of perovskite materials with lithographic processes for advanced optoelectronic applications. Currently, bottom-up photolithography is preferred due to perovskites’ intrinsic characteristics, while top-down photolithography offers better compatibility with mature semiconductor manufacturing workflows. In this study, we innovatively propose an integrated technology that merges top-down photolithography with <i>in situ</i> phase-transition strategy. Utilizing non-emissive Cs<sub>4</sub>PbBr<sub>6</sub> perovskite single crystals (SCs) as both structural templates and reaction sources, we achieve spatially selective patterning by precise wet and dry etching, followed by inductively coupled plasma (ICP)-induced Cs<sub>4</sub>PbBr<sub>6</sub> to CsPbBr<sub>3</sub> phase transition. This process facilitates the direct fabrication of highly emissive CsPbBr<sub>3</sub>/Cs<sub>4</sub>PbBr<sub>6</sub> microstructure patterns inside Cs<sub>4</sub>PbBr<sub>6</sub> SCs. Such a synergistic approach simplifies perovskite photolithography procedures and enables rapid, large-scale manufacturability. Furthermore, its integration with machine learning optimization algorithms showcases promising application potential in intelligent anti-counterfeiting. This novel approach, integrating perovskite SCs homologous substrate with customized photolithography, provides a new strategy for fabricating high-performance perovskite optoelectronic devices and is expected to promote technological advancement.</p>

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Synergistic top-down etching coupled with in situ phase transition: a strategy for high-precision photolithographic patterning of perovskite single crystals

  • 期刊论文

  • 发表日期：

    2026年3月10日

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  • Lan Yang,
  • Ning Zhang,
  • Siqi Li,
  • Hao Liu,
  • Xilin Zhang,
  • Yang-Yang Yu

摘要

Perovskite photolithography, an emerging research frontier, combines the unique properties of perovskite materials with lithographic processes for advanced optoelectronic applications. Currently, bottom-up photolithography is preferred due to perovskites’ intrinsic characteristics, while top-down photolithography offers better compatibility with mature semiconductor manufacturing workflows. In this study, we innovatively propose an integrated technology that merges top-down photolithography with in situ phase-transition strategy. Utilizing non-emissive Cs4PbBr6 perovskite single crystals (SCs) as both structural templates and reaction sources, we achieve spatially selective patterning by precise wet and dry etching, followed by inductively coupled plasma (ICP)-induced Cs4PbBr6 to CsPbBr3 phase transition. This process facilitates the direct fabrication of highly emissive CsPbBr3/Cs4PbBr6 microstructure patterns inside Cs4PbBr6 SCs. Such a synergistic approach simplifies perovskite photolithography procedures and enables rapid, large-scale manufacturability. Furthermore, its integration with machine learning optimization algorithms showcases promising application potential in intelligent anti-counterfeiting. This novel approach, integrating perovskite SCs homologous substrate with customized photolithography, provides a new strategy for fabricating high-performance perovskite optoelectronic devices and is expected to promote technological advancement.