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<p>High-quality β-Ga<sub>2</sub>O<sub>3</sub> membranes are pivotal for the fabrication of high-performance memristive devices. Here, vertical Ag/β-Ga<sub>2</sub>O<sub>3</sub>/Pt memristors built on high-crystalline-quality β-Ga<sub>2</sub>O<sub>3</sub> membranes via lattice epitaxy engineering and a sacrificial-layer-assisted exfoliation strategy have been reported. The resulting β-Ga<sub>2</sub>O<sub>3</sub>-based device demonstrates a high ON/OFF ratio exceeding 10<sup>8</sup>, low SET/RESET voltages of 0.13 V/−0.11 V, low programming current of 10<sup>−10</sup> A, stable data retention beyond 4 × 10<sup>4</sup> s, and excellent subthreshold characteristics of ∼0.47 mV/dec. Adjustable compliance current enables the coexistence of volatile and non-volatile switching modes. Additionally, the resistive switching versatility is predominantly governed by the migration of Ag ions, as supported by electrical characterizations and first-principles calculations. Furthermore, a β-Ga<sub>2</sub>O<sub>3</sub> memristor-based circuit that functions as a reconfigurable and non-volatile exclusive OR (XOR) logic gate has been designed and simulated, enabling both image encryption/decryption and edge detection. This work not only demonstrates lattice-engineered, high-quality β-Ga<sub>2</sub>O<sub>3</sub> membranes for fabricating advanced memristors but also extends their applicability to digital logic and reconfigurable image processing.</p>

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Lattice-engineered high-quality β-Ga2O3 membranes for memristive applications towards image encryption, decryption, and edge detection

  • 期刊论文

  • 发表日期：

    2026年1月15日

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  • Nan He,
  • Guokai Bai,
  • Kunfang Chen,
  • Xiang Wan,
  • Jiahang Liu,
  • Zi Li,
  • Haiming Qin,
  • Xiaojuan Lian,
  • Xiaoyan Liu,
  • Dapeng Yan,
  • Yi Tong,
  • Qiang Chen,
  • Xueqiang Ji,
  • Lei Wang

摘要

High-quality β-Ga2O3 membranes are pivotal for the fabrication of high-performance memristive devices. Here, vertical Ag/β-Ga2O3/Pt memristors built on high-crystalline-quality β-Ga2O3 membranes via lattice epitaxy engineering and a sacrificial-layer-assisted exfoliation strategy have been reported. The resulting β-Ga2O3-based device demonstrates a high ON/OFF ratio exceeding 108, low SET/RESET voltages of 0.13 V/−0.11 V, low programming current of 10−10 A, stable data retention beyond 4 × 104 s, and excellent subthreshold characteristics of ∼0.47 mV/dec. Adjustable compliance current enables the coexistence of volatile and non-volatile switching modes. Additionally, the resistive switching versatility is predominantly governed by the migration of Ag ions, as supported by electrical characterizations and first-principles calculations. Furthermore, a β-Ga2O3 memristor-based circuit that functions as a reconfigurable and non-volatile exclusive OR (XOR) logic gate has been designed and simulated, enabling both image encryption/decryption and edge detection. This work not only demonstrates lattice-engineered, high-quality β-Ga2O3 membranes for fabricating advanced memristors but also extends their applicability to digital logic and reconfigurable image processing.