Scholarlink

<p>The high quantum efficiency (QE) and thermal robustness of near-infrared (NIR) phosphors are critical for phosphor-converted light-emitting diodes (pc-LEDs). Isovalent or aliovalent substitution enables spectral tailoring and performance enhancement in phosphors through controlled coordination and defect engineering. Garnet-type compounds offer tunable crystalline frameworks as advanced phosphor hosts. Herein, a Cr<sup>3+</sup> activated Lu<sub>2</sub>BaAl<sub>4</sub>SiO<sub>12</sub> (LBASO) garnet phosphor is engineered through a chemical unit cosubstitution in which [Ba<sup>2+</sup>-Si<sup>4+</sup>] replaces [Lu<sup>3+</sup>-Al<sup>3+</sup>] in Lu<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> (LuAG), resulting in strong crystal field NIR emission characteristics (<i>λ</i><sub>em</sub> = 705 nm). The optimized LBASO:0.07Cr<sup>3+</sup> demonstrated high internal/external quantum efficiencies (IQE/EQE) of 84.82%/46.02%. Notably, this phosphor exhibits anti-thermal quenching (ATQ) resistance (126.03%@498 K) under 442 nm excitation, primarily attributed to its wide band gap, weak electron-phonon coupling (EPC) effect, defect trap energy levels, high structural rigidity of the matrix, and optimized electron population distribution. Furthermore, the NIR pc-LEDs fabricated with this phosphor achieve excellent NIR output power/photoelectric conversion efficiency of 134.99 mW/11.4% under a current drive of 100 mA. This technology has broad application prospects in plant lighting, night vision, and nondestructive analysis.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Defect and crystal field engineering enables high efficiency and anti-thermal quenching in Cr3+ doped rigid garnet phosphors for multifunctional optoelectronics

  • 期刊论文

  • 发表日期：

    2026年2月2日

查看全文
  • Fangrui Cheng,
  • Yixuan Lai,
  • Yifei Zhao,
  • Runying Zheng,
  • Chengjie Li,
  • Luxia Zhong,
  • Fangmin Lin,
  • Yizhi Zheng,
  • Ruirui Yang,
  • Renping Cao,
  • Yinghan Wang,
  • Hang Zhu,
  • Shi Ye,
  • Xiping Jing

摘要

The high quantum efficiency (QE) and thermal robustness of near-infrared (NIR) phosphors are critical for phosphor-converted light-emitting diodes (pc-LEDs). Isovalent or aliovalent substitution enables spectral tailoring and performance enhancement in phosphors through controlled coordination and defect engineering. Garnet-type compounds offer tunable crystalline frameworks as advanced phosphor hosts. Herein, a Cr3+ activated Lu2BaAl4SiO12 (LBASO) garnet phosphor is engineered through a chemical unit cosubstitution in which [Ba2+-Si4+] replaces [Lu3+-Al3+] in Lu3Al5O12 (LuAG), resulting in strong crystal field NIR emission characteristics (λem = 705 nm). The optimized LBASO:0.07Cr3+ demonstrated high internal/external quantum efficiencies (IQE/EQE) of 84.82%/46.02%. Notably, this phosphor exhibits anti-thermal quenching (ATQ) resistance (126.03%@498 K) under 442 nm excitation, primarily attributed to its wide band gap, weak electron-phonon coupling (EPC) effect, defect trap energy levels, high structural rigidity of the matrix, and optimized electron population distribution. Furthermore, the NIR pc-LEDs fabricated with this phosphor achieve excellent NIR output power/photoelectric conversion efficiency of 134.99 mW/11.4% under a current drive of 100 mA. This technology has broad application prospects in plant lighting, night vision, and nondestructive analysis.