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<p>Hafnium oxide (HfO<sub>2</sub>)-based ferroelectric materials have been widely applied in logic and memory devices due to their favorable ferroelectric and dielectric properties. However, the weak ferroelectric polarization of pure HfO<sub>2</sub> limits its application potential in advanced ferroelectric devices. Here, an ultrahigh remanent polarization is successfully achieved in the Ce-doped HfO<sub>2</sub> films through a chemical negative strain due to the biaxial strain engineering strategy. The Ce-doped HfO<sub>2</sub> films with regulated ions concentrations are fabricated on crystallographic-oriented substrates, and the effects of substrate-induced strain on the film growth were systematically investigated. Notably, the Ce-doped HfO<sub>2</sub> films grown on (011) oriented substrates exhibit an excellent remanent polarization (2<i>P</i><sub>r</sub> = 102.1 µC/cm<sup>2</sup>), representing the highest value reported for HfO<sub>2</sub>-based ferroelectrics, along with the outstanding fatigue resistance (&lt;10% degradation after 10<sup>7</sup> switching cycles). This work provides a novel strategy for developing high-performance HfO<sub>2</sub>-based ferroelectric materials through strain engineering, laying a critical foundation for their applications in non-volatile memory technologies.</p>

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Ultrahigh remanent polarization of Ce-doped HfO2 ferroelectric thin films through strain engineering

  • 期刊论文

  • 发表日期：

    2025年7月14日

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  • Hangren Li,
  • Jie Tu,
  • Jiaqi Ding,
  • Jing Xia,
  • Longyuan Shi,
  • Siyuan Du,
  • Xiuqiao Liu,
  • Xudong Liu,
  • Menglin Li,
  • Jianjun Tian,
  • Linxing Zhang

摘要

Hafnium oxide (HfO2)-based ferroelectric materials have been widely applied in logic and memory devices due to their favorable ferroelectric and dielectric properties. However, the weak ferroelectric polarization of pure HfO2 limits its application potential in advanced ferroelectric devices. Here, an ultrahigh remanent polarization is successfully achieved in the Ce-doped HfO2 films through a chemical negative strain due to the biaxial strain engineering strategy. The Ce-doped HfO2 films with regulated ions concentrations are fabricated on crystallographic-oriented substrates, and the effects of substrate-induced strain on the film growth were systematically investigated. Notably, the Ce-doped HfO2 films grown on (011) oriented substrates exhibit an excellent remanent polarization (2Pr = 102.1 µC/cm2), representing the highest value reported for HfO2-based ferroelectrics, along with the outstanding fatigue resistance (<10% degradation after 107 switching cycles). This work provides a novel strategy for developing high-performance HfO2-based ferroelectric materials through strain engineering, laying a critical foundation for their applications in non-volatile memory technologies.