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<p>Two-dimensional (2D) ferroelectrics with high Curie temperature (<i>T</i><sub>c</sub>) exhibit stable ferroelectricity at the nanoscale and possess significant applications in the miniaturization of ferroelectric devices. However, controllable growth of wafer-scale 2D ferroelectric films with desired thickness is still rarely reported. In this study, we develop a two-step vapour deposition method to grow wafer-scale 2D CuCrS<sub>2</sub> ferroelectric films with a uniform thickness from 2 to 10 nm. These films possess a non-centrosymmetric structure with a 3R stacking sequence, exhibit ferroelectric polarizations, and the <i>T</i><sub>c</sub> of CuCrS<sub>2</sub> is higher than room temperature. The constructed electronic devices exhibit the characteristics of ferroelectric memristor, which opens up applications for ferroelectric functional devices.</p>

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Growth of wafer-scale two-dimensional ferroelectric CuCrS2 films

  • 期刊论文

  • 发表日期：

    2025年7月2日

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  • Kun Yu,
  • Hui Wang,
  • Weilin Liu,
  • Zihao Fu,
  • Yichen Feng,
  • Wenna Tang,
  • Lu Han,
  • Yuefeng Nie,
  • Dong Li,
  • Zhenjia Zhou,
  • Jun Li,
  • Anlian Pan,
  • Libo Gao

摘要

Two-dimensional (2D) ferroelectrics with high Curie temperature (Tc) exhibit stable ferroelectricity at the nanoscale and possess significant applications in the miniaturization of ferroelectric devices. However, controllable growth of wafer-scale 2D ferroelectric films with desired thickness is still rarely reported. In this study, we develop a two-step vapour deposition method to grow wafer-scale 2D CuCrS2 ferroelectric films with a uniform thickness from 2 to 10 nm. These films possess a non-centrosymmetric structure with a 3R stacking sequence, exhibit ferroelectric polarizations, and the Tc of CuCrS2 is higher than room temperature. The constructed electronic devices exhibit the characteristics of ferroelectric memristor, which opens up applications for ferroelectric functional devices.