<p>Flexible thermoelectric power generation is increasingly recognized as a viable solution for powering wearable electronic devices. However, the performance limitations of n-type flexible thin films have restricted their wider application. Here, we successfully fabricated n-type Ag₂Se thin films with a high power factor of 2.14 mW m⁻¹ K⁻² at 300 K through texture engineering. Utilizing a straightforward thermal evaporation technique, we produced (201)-textured n-type Ag₂Se thin films by employing Se precursor strategies. Both experimental and theoretical analyses reveal that Ag₂Se thin films with this specific orientation exhibit superior carrier mobility and a high Seebeck coefficient. Moreover, the inherent low thermal conductivity of Ag₂Se is further reduced by the presence of nanopores and random in-plane orientation, which effectively scatter phonons across various wavelengths. As a result, the Ag₂Se films achieved an optimal <i>ZT</i> value of 0.73 at 363 K, suggesting substantial potential for further improvements. This research not only demonstrates a strategic method to manipulate the crystallographic orientation of Ag₂Se thin films but also opens up new possibilities for developing high-performance thermoelectric materials.</p>