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<p>Multiferroic van der Waals (vdW) heterostructures hold great potential for next-generation spin-based memory and logic devices, offering versatile control over electron spins and electric polarization in atomically thin platforms. However, achieving exceptionally large tunnel magnetoresistance (TMR), stable multi-resistance states, and low resistance-area (RA) products remains a challenge. Here, using first-principles calculations, we address these issues by designing a Fe<sub>3</sub>GaTe<sub>2</sub>/α-In<sub>2</sub>Se<sub>3</sub>/Fe<sub>3</sub>GaTe<sub>2</sub> multiferroic tunnel junction (MFTJ). We demonstrate large TMR values exceeding 10<sup>5</sup>%, nonvolatile multistate and RA product below 1 Ω µm<sup>2</sup>, which matched the requirements for high-density memory cells. The remarkably low RA products from the ultrathin ferroelectric barrier’s narrow bandgap, while the exceptionally high TMR and nearly perfect spin polarization originate from enhanced momentum-selective tunneling at the Fe<sub>3</sub>GaTe<sub>2</sub>/α-In<sub>2</sub>Se<sub>3</sub> interface. Moreover, the low energy barrier for ferroelectric switching enables efficient voltage-driven polarization control. These findings establish a clear pathway for integrating low-RA, high-TMR, and multistate MFTJs into spintronic architectures, accelerating the development of high-density, energy-efficient data storage and processing technologies.</p>

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Large and multistate magnetoresistance in 2D van der Waals multiferroic tunnel junctions

  • 期刊论文

  • 发表日期：

    2025年4月8日

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  • Wei Yang,
  • Yibo Xu,
  • Shen Li,
  • Jiangchao Han,
  • Xiaoyang Lin,
  • Weisheng Zhao

摘要

Multiferroic van der Waals (vdW) heterostructures hold great potential for next-generation spin-based memory and logic devices, offering versatile control over electron spins and electric polarization in atomically thin platforms. However, achieving exceptionally large tunnel magnetoresistance (TMR), stable multi-resistance states, and low resistance-area (RA) products remains a challenge. Here, using first-principles calculations, we address these issues by designing a Fe3GaTe2/α-In2Se3/Fe3GaTe2 multiferroic tunnel junction (MFTJ). We demonstrate large TMR values exceeding 105%, nonvolatile multistate and RA product below 1 Ω µm2, which matched the requirements for high-density memory cells. The remarkably low RA products from the ultrathin ferroelectric barrier’s narrow bandgap, while the exceptionally high TMR and nearly perfect spin polarization originate from enhanced momentum-selective tunneling at the Fe3GaTe2/α-In2Se3 interface. Moreover, the low energy barrier for ferroelectric switching enables efficient voltage-driven polarization control. These findings establish a clear pathway for integrating low-RA, high-TMR, and multistate MFTJs into spintronic architectures, accelerating the development of high-density, energy-efficient data storage and processing technologies.