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<p>Near-infrared (NIR) organic photodetectors (OPDs) hold enormous commercial potential in wearable biosensing and imaging applications. However, their sensitivity remains comparatively lower than that of commercially available silicon-based photodetectors (Si PDs). In this study, we present highly sensitive NIR OPDs by incorporating an all-fused-ring small molecule acceptor, FM4, with low trap density into a conventional active layer system. FM4 effectively reduces traps in the active layer, resulting in a decrease in trap density from 1.57 × 10<sup>15</sup> to 8.86 × 10<sup>14</sup> cm<sup>−3</sup>. Consequently, under −1 V bias, the OPD device with FM4 as the third component achieves an ultra-low real-measured noise current of 7.56 × 10<sup>−15</sup> A Hz<sup>−1/2</sup> at 1 kHz, lower than that of commercial Si PDs, which is primarily attributed to the substantial decrease in trap density within the active layer. Due to its ultra-low noise current, the ternary device exhibits a high specific detectivity of 1.83 × 10<sup>13</sup> Jones at 840 nm under −1 V bias and a broad linear dynamic range of 155 dB. Its sensitivity exceeds that of Si PDs. Furthermore, this sensitive OPD device has been successfully utilized in single-pixel low-light imaging, delivering superior image clarity compared to Si PDs.</p>

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Near-infrared organic photodetectors outperform Si photodetectors: introducing an all-fused-ring acceptor into active layers for ultra-low trap density

  • 期刊论文

  • 发表日期：

    2025年3月4日

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  • Wenliang Chen,
  • Yingze Zhang,
  • Xiaoyu Zhu,
  • Junhui Miao,
  • Jun Liu,
  • Lixiang Wang

摘要

Near-infrared (NIR) organic photodetectors (OPDs) hold enormous commercial potential in wearable biosensing and imaging applications. However, their sensitivity remains comparatively lower than that of commercially available silicon-based photodetectors (Si PDs). In this study, we present highly sensitive NIR OPDs by incorporating an all-fused-ring small molecule acceptor, FM4, with low trap density into a conventional active layer system. FM4 effectively reduces traps in the active layer, resulting in a decrease in trap density from 1.57 × 1015 to 8.86 × 1014 cm−3. Consequently, under −1 V bias, the OPD device with FM4 as the third component achieves an ultra-low real-measured noise current of 7.56 × 10−15 A Hz−1/2 at 1 kHz, lower than that of commercial Si PDs, which is primarily attributed to the substantial decrease in trap density within the active layer. Due to its ultra-low noise current, the ternary device exhibits a high specific detectivity of 1.83 × 1013 Jones at 840 nm under −1 V bias and a broad linear dynamic range of 155 dB. Its sensitivity exceeds that of Si PDs. Furthermore, this sensitive OPD device has been successfully utilized in single-pixel low-light imaging, delivering superior image clarity compared to Si PDs.