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<p>Ovonic threshold switching selectors are indispensable for suppressing sneak currents in dense cross-point memories, but most established selector materials still rely on multicomponent chalcogenides with persistent trade-offs in leakage current, reliability, and compositional stability. Recent progress in elemental switching materials is beginning to change this picture. A new study identifies amorphous selenium as a highly effective selector, combining an ultralow leakage current of 4 × 10<sup>–12</sup> A, an on/off ratio above 10<sup>8</sup>, a drive current density of 21.2 MA cm<sup>–2</sup>, nanosecond-scale switching, and endurance up to 2 × 10<sup>9</sup> cycles. More importantly, spectroscopy and theory connect these metrics to a charge-triggered mechanism rooted in dense trap pairs in the amorphous network. These states strongly pin the Fermi level in the off-state, while field-induced carrier release near threshold drives abrupt conduction. Beyond introducing a new selector material, this work suggests that monatomic chalcogens may provide a cleaner platform for understanding and engineering threshold switching, with fewer complications from phase segregation, cation migration, and chemical overdesign.</p>

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Elemental Selector for High-Density Memory Integration

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年7月13日

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  • Shaojie Yuan,
  • Pandeng Xuan,
  • Meng Xu,
  • Ming Xu,
  • Xiangshui Miao

摘要

Ovonic threshold switching selectors are indispensable for suppressing sneak currents in dense cross-point memories, but most established selector materials still rely on multicomponent chalcogenides with persistent trade-offs in leakage current, reliability, and compositional stability. Recent progress in elemental switching materials is beginning to change this picture. A new study identifies amorphous selenium as a highly effective selector, combining an ultralow leakage current of 4 × 10–12 A, an on/off ratio above 108, a drive current density of 21.2 MA cm–2, nanosecond-scale switching, and endurance up to 2 × 109 cycles. More importantly, spectroscopy and theory connect these metrics to a charge-triggered mechanism rooted in dense trap pairs in the amorphous network. These states strongly pin the Fermi level in the off-state, while field-induced carrier release near threshold drives abrupt conduction. Beyond introducing a new selector material, this work suggests that monatomic chalcogens may provide a cleaner platform for understanding and engineering threshold switching, with fewer complications from phase segregation, cation migration, and chemical overdesign.