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<p>Despite the ultra-high theoretical capacity of silicon (Si) anodes, their practical application is severely hindered by drastic volume effect and an unstable solid-electrolyte interphase (SEI). Atomic/molecular layer deposition (ALD/MLD) technology exhibits unique advantages in mitigating these challenges by constructing a stable and functionalized interface on Si anodes. This review summarizes recent advances and presents perspectives on ALD/MLD for Si anode interface engineering. Firstly, the existing interfacial challenges are analyzed: mechanical failure and structural degradation, complex/unstable SEI, and insufficient interfacial charge transfer. Subsequently, the key role and mechanism of ALD/MLD in enhancing the performance of Si anodes are elucidated from an atomic/molecular-scale interface engineering perspective. Crucially, three key aspects are emphasized: enhancing structural stability through mechanical confinement and stress dissipation, inducing the formation of stable SEI via ingenious interface chemical design, and constructing efficient ion/electron transport channels to optimize interfacial charge transfer kinetics. Finally, future research directions on ALD/MLD for Si anode interface engineering are proposed.</p>

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Recent Advances of Atomic/Molecular Layer Deposition Engineering Silicon Interface for Lithium-Ion Batteries

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年6月22日

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  • Haocheng Wen,
  • Yuhui Xu,
  • Xiaoxue Wang,
  • Ming Li,
  • Lulu Zhang,
  • Huaming Qian,
  • Jia Kang,
  • Xuexia Song,
  • Yetong Li,
  • Jingjing Wang,
  • Jiujun Zhang,
  • Xifei Li

摘要

Despite the ultra-high theoretical capacity of silicon (Si) anodes, their practical application is severely hindered by drastic volume effect and an unstable solid-electrolyte interphase (SEI). Atomic/molecular layer deposition (ALD/MLD) technology exhibits unique advantages in mitigating these challenges by constructing a stable and functionalized interface on Si anodes. This review summarizes recent advances and presents perspectives on ALD/MLD for Si anode interface engineering. Firstly, the existing interfacial challenges are analyzed: mechanical failure and structural degradation, complex/unstable SEI, and insufficient interfacial charge transfer. Subsequently, the key role and mechanism of ALD/MLD in enhancing the performance of Si anodes are elucidated from an atomic/molecular-scale interface engineering perspective. Crucially, three key aspects are emphasized: enhancing structural stability through mechanical confinement and stress dissipation, inducing the formation of stable SEI via ingenious interface chemical design, and constructing efficient ion/electron transport channels to optimize interfacial charge transfer kinetics. Finally, future research directions on ALD/MLD for Si anode interface engineering are proposed.