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<p>Inverted perovskite solar cells have achieved exceptional efficiencies, yet their operational stability, particularly under reverse-bias stress, remains a critical challenge. This instability is fundamentally driven by lattice strain, which lowers ion migration barriers and promotes defect formation. Here, we identify the buried hole-transport-layer/perovskite interface as the principal site of strain accumulation. By incorporating 3-fluorothiophene-2-carboxylic acid (3F-2TC) at this buried HTL/perovskite interface, we directly engineer the initial perovskite crystallization template. This buried interface engineering strategy effectively alleviates intrinsic lattice strain, as unambiguously confirmed by grazing-incidence X-ray diffraction analysis. Crucially, we utilize reverse-bias stress as a diagnostic probe to decouple strain relaxation from mere defect passivation, revealing that a low-strain lattice constitutes the primary defense against bias-induced degradation. Consequently, the champion devices achieve a high power conversion efficiency (PCE) of 26.10% and markedly enhanced stability, retaining 91.58% of their initial PCE after 200 h under −&#xa0;1.0 V reverse bias. This work thereby establishes the buried interface engineering for strain modulation as a generalizable design principle toward efficient and operationally resilient perovskite photovoltaics.</p>

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Taming Lattice Strain via Buried Interface Engineering for Reverse-Bias Resilient Perovskite Solar Cells

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年5月27日

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  • Niqian Du,
  • Shanshan Du,
  • Yaru Du,
  • Xiaobo Zhang,
  • Xiaoyi Hou,
  • Chi Feng,
  • Rongdong Xiang,
  • Xin Wu,
  • Heping Fu,
  • Zhiyong Liu,
  • Tingwei He,
  • Kaikai Liu

摘要

Inverted perovskite solar cells have achieved exceptional efficiencies, yet their operational stability, particularly under reverse-bias stress, remains a critical challenge. This instability is fundamentally driven by lattice strain, which lowers ion migration barriers and promotes defect formation. Here, we identify the buried hole-transport-layer/perovskite interface as the principal site of strain accumulation. By incorporating 3-fluorothiophene-2-carboxylic acid (3F-2TC) at this buried HTL/perovskite interface, we directly engineer the initial perovskite crystallization template. This buried interface engineering strategy effectively alleviates intrinsic lattice strain, as unambiguously confirmed by grazing-incidence X-ray diffraction analysis. Crucially, we utilize reverse-bias stress as a diagnostic probe to decouple strain relaxation from mere defect passivation, revealing that a low-strain lattice constitutes the primary defense against bias-induced degradation. Consequently, the champion devices achieve a high power conversion efficiency (PCE) of 26.10% and markedly enhanced stability, retaining 91.58% of their initial PCE after 200 h under − 1.0 V reverse bias. This work thereby establishes the buried interface engineering for strain modulation as a generalizable design principle toward efficient and operationally resilient perovskite photovoltaics.