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<p>Human–machine interface (HMI) systems require energy harvesters that can operate efficiently under low contact forces, yet conventional tactile triboelectric nanogenerators (TENGs) suffer from low surface charge density and unstable output. Here, we propose a human skin electric field-induced air-breakdown TENG (AB-TENG) with a transistor-inspired architecture. The device employs a base terminal to collect electrons from human skin via an ionized air channel formed by air breakdown, enabling efficient conversion of the skin’s electric field through two operational modes: indirect (accumulated output) and direct (instant high output). In direct mode, the AB-TENG delivers 165&#xa0;V at 2 N and 290&#xa0;V at 24 N, with a peak power of 22 mW—22 times higher than conventional tactile TENGs. Practical utility is demonstrated through a self-powered infrared remote control and an ultrathin keyboard. This work establishes a new design paradigm that transforms air breakdown from a limitation into a functional mechanism, advancing skin-electricity-enhanced thin-film TENGs toward next-generation self-sustaining HMI platforms.</p>

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Air-Breakdown Triboelectric Nanogenerator Inspired by Transistor Architecture for Low-Force Human–Machine Interfaces

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年2月11日

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  • Karthikeyan Munirathinam,
  • Longlong Li,
  • Arunkumar Shanmugasundaram,
  • Jongsung Park,
  • Dong-Weon Lee

摘要

Human–machine interface (HMI) systems require energy harvesters that can operate efficiently under low contact forces, yet conventional tactile triboelectric nanogenerators (TENGs) suffer from low surface charge density and unstable output. Here, we propose a human skin electric field-induced air-breakdown TENG (AB-TENG) with a transistor-inspired architecture. The device employs a base terminal to collect electrons from human skin via an ionized air channel formed by air breakdown, enabling efficient conversion of the skin’s electric field through two operational modes: indirect (accumulated output) and direct (instant high output). In direct mode, the AB-TENG delivers 165 V at 2 N and 290 V at 24 N, with a peak power of 22 mW—22 times higher than conventional tactile TENGs. Practical utility is demonstrated through a self-powered infrared remote control and an ultrathin keyboard. This work establishes a new design paradigm that transforms air breakdown from a limitation into a functional mechanism, advancing skin-electricity-enhanced thin-film TENGs toward next-generation self-sustaining HMI platforms.