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<p>Wafer-scale fabrication of high-performance micro-electro-mechanical systems (MEMS) bio/chemical sensing chips remains constrained by the absence of reliable methods for integrating high-performance nanomaterials into suspended MEMS architectures. Here, a wafer-level manufacturing strategy is presented that redefines the MEMS process flow as “film first, cantilever later.” Through kinetically controlled self-assembly, wet-chemically synthesized Pd/SnO<sub>2</sub> nanospheres are transferred as dense, uniform monolithic films onto 8-inch wafers. An HfO<sub>2</sub> interface passivation patterning technology resolves long-standing incompatibility between functional sensing films and silicon substrates, enabling precise patterning and reliable integration on suspended MEMS cantilevers. The resulting Pd/SnO<sub>2</sub> MEMS H<sub>2</sub> chips are fabricated onto an 8-inch wafer, demonstrating high sensitivity and consistency. This approach overcomes long-standing wafer-level manufacturing challenges in the formation and patterning of high-performance nanomaterials film, establishing a fully integrated wafer-level process that fundamentally redefines the manufacturing route for tetramethylammonium hydroxide-resistant nanomaterial-based MEMS sensing chips.</p>

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Wafer-Level Self-Assembly and Interface Passivation Patterning Technology for Nanomaterial-Compatible 3D MEMS Sensing Chips

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2026年1月26日

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  • Zheng Zhang,
  • Yanlin Zhang,
  • Yuanyuan Luo,
  • Guoliang Lv,
  • Jianglin Yin,
  • Pengwei Tan,
  • Guotao Duan

摘要

Wafer-scale fabrication of high-performance micro-electro-mechanical systems (MEMS) bio/chemical sensing chips remains constrained by the absence of reliable methods for integrating high-performance nanomaterials into suspended MEMS architectures. Here, a wafer-level manufacturing strategy is presented that redefines the MEMS process flow as “film first, cantilever later.” Through kinetically controlled self-assembly, wet-chemically synthesized Pd/SnO2 nanospheres are transferred as dense, uniform monolithic films onto 8-inch wafers. An HfO2 interface passivation patterning technology resolves long-standing incompatibility between functional sensing films and silicon substrates, enabling precise patterning and reliable integration on suspended MEMS cantilevers. The resulting Pd/SnO2 MEMS H2 chips are fabricated onto an 8-inch wafer, demonstrating high sensitivity and consistency. This approach overcomes long-standing wafer-level manufacturing challenges in the formation and patterning of high-performance nanomaterials film, establishing a fully integrated wafer-level process that fundamentally redefines the manufacturing route for tetramethylammonium hydroxide-resistant nanomaterial-based MEMS sensing chips.