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<p>Innovative use of HfO<sub>2</sub>-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges, which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal–oxide–semiconductor devices. During bipolar high electric-field cycling in numbers close to dielectric breakdown, the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> thin-film capacitors. Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85&#xa0;μm when the ferroelectricity suddenly disappears without high-field cycling. The stored charge density is as high as 183 μC cm<sup>−2</sup> at an operating voltage/time of 1.2&#xa0;V/50&#xa0;ns at cycle numbers of more than 10<sup>12</sup> without inducing dielectric breakdown. The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase. The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries. The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.</p>

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Ultrahigh Dielectric Permittivity of a Micron-Sized Hf0.5Zr0.5O2 Thin-Film Capacitor After Missing of a Mixed Tetragonal Phase

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  • 发表日期：

    2025年7月18日

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  • Wen Di Zhang,
  • Bing Li,
  • Wei Wei Wang,
  • Xing Ya Wang,
  • Yan Cheng,
  • An Quan Jiang

摘要

Innovative use of HfO2-based high-dielectric-permittivity materials could enable their integration into few-nanometre-scale devices for storing substantial quantities of electrical charges, which have received widespread applications in high-storage-density dynamic random access memory and energy-efficient complementary metal–oxide–semiconductor devices. During bipolar high electric-field cycling in numbers close to dielectric breakdown, the dielectric permittivity suddenly increases by 30 times after oxygen-vacancy ordering and ferroelectric-to-nonferroelectric phase transition of near-edge plasma-treated Hf0.5Zr0.5O2 thin-film capacitors. Here we report a much higher dielectric permittivity of 1466 during downscaling of the capacitor into the diameter of 3.85 μm when the ferroelectricity suddenly disappears without high-field cycling. The stored charge density is as high as 183 μC cm−2 at an operating voltage/time of 1.2 V/50 ns at cycle numbers of more than 1012 without inducing dielectric breakdown. The study of synchrotron X-ray micro-diffraction patterns show missing of a mixed tetragonal phase. The image of electron energy loss spectroscopy shows the preferred oxygen-vacancy accumulation at the regions near top/bottom electrodes as well as grain boundaries. The ultrahigh dielectric-permittivity material enables high-density integration of extremely scaled logic and memory devices in the future.