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<p>As the More-than-Moore (MtM) paradigm reshapes semiconductor manufacturing toward functional integration, material diversity, and high-precision three-dimensional (3D) architectures, chemical mechanical polishing (CMP) has evolved from a planarization step into a critical enabler of heterogeneous integration. This review comprehensively examines the key challenges and technological innovations driving CMP in the MtM era. In front-end-of-line (FEOL) processes, high selectivity among diverse materials should be ensured while suppressing defects. In back-end-of-line (BEOL) and advanced packaging, CMP is required to deliver sub-nanometer flatness across complex multilayer and hybrid bonding structures. The emergence of wide-bandgap materials such as SiC and GaN introduces additional demands for chemically enhanced and hybrid CMP techniques to overcome their extreme hardness and chemical inertness. Furthermore, recent advancements in artificial intelligence (AI)-driven process prediction, in-situ sensing, and eco-friendly consumables are accelerating CMP’s transformation into a data-informed, sustainable manufacturing platform. This review redefines CMP as a foundational technology for next-generation integration and outlines its future trajectory in advanced semiconductor fabrication.</p>

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Challenges and Innovations in Chemical Mechanical Polishing in the More-than-Moore Era

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2026年1月14日

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  • Hyeongmin Je,
  • Sukkyung Kang,
  • Sanha Kim

摘要

As the More-than-Moore (MtM) paradigm reshapes semiconductor manufacturing toward functional integration, material diversity, and high-precision three-dimensional (3D) architectures, chemical mechanical polishing (CMP) has evolved from a planarization step into a critical enabler of heterogeneous integration. This review comprehensively examines the key challenges and technological innovations driving CMP in the MtM era. In front-end-of-line (FEOL) processes, high selectivity among diverse materials should be ensured while suppressing defects. In back-end-of-line (BEOL) and advanced packaging, CMP is required to deliver sub-nanometer flatness across complex multilayer and hybrid bonding structures. The emergence of wide-bandgap materials such as SiC and GaN introduces additional demands for chemically enhanced and hybrid CMP techniques to overcome their extreme hardness and chemical inertness. Furthermore, recent advancements in artificial intelligence (AI)-driven process prediction, in-situ sensing, and eco-friendly consumables are accelerating CMP’s transformation into a data-informed, sustainable manufacturing platform. This review redefines CMP as a foundational technology for next-generation integration and outlines its future trajectory in advanced semiconductor fabrication.