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<p>Single-crystal silicon carbide (4&#xa0;H-SiC) is extensively used in power electronics due to its exceptional material characteristics. Traditional machining of 4&#xa0;H-SiC is challenging, however, due to its inherent hardness and brittleness. Laser cutting, known for its precision and non-contact nature, offers a viable alternative for overcoming these limitations. Despite its potential, research on laser cutting of single-crystal silicon carbide remains limited, necessitating further investigation. In this study, 4&#xa0;H-SiC wafers with a thickness of 350&#xa0;μm were processed using a nanosecond ultraviolet laser with a maximum average power of 5&#xa0;W. An axisymmetric heat-conduction model was formulated and solved using a Hankel transform to clarify the laser-material thermal interaction. Combined with finite-element simulation (FEM) and experimental validation, the mechanisms and cutting quality of nanosecond ultraviolet laser cutting of 4&#xa0;H-SiC were investigated. The effects of average power (3–5&#xa0;W), scanning speed (5–45&#xa0;mm/s), repetition frequency (110–150&#xa0;kHz), and number of scans (1–9) on kerf morphology and quality were systematically analyzed. A three-dimensional thermo-mechanically coupled FE model was developed to simulate the transient scanning process and kerf formation. The model was validated by single-factor experiments, and the maximum chipping width was quantitatively defined as a key quality metric. Using response-surface methodology, accurate regression models were established to capture parameter interactions and reveal their combined effects on cutting quality. The optimal laser cutting parameters were identified as 4.99&#xa0;W average power, 7.06&#xa0;mm/s scanning speed, 150&#xa0;kHz repetition frequency, and a single scan. Under these conditions, the kerf depth reached 216.347&#xa0;μm, the depth-to-width ratio was 16.077, and the chipping width was 16.898&#xa0;μm. These findings provide theoretical and experimental guidance for achieving high-quality, low-damage laser cutting of single-crystal 4&#xa0;H-SiC wafers.</p>

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Removal mechanisms and cutting quality control strategy of laser cutting single-crystal SiC wafers based on response surface methodology

  • 期刊论文

  • 发表日期：

    2026年3月16日

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  • Guoqiang Yin,
  • Heng Zhang,
  • Luhui Yang,
  • Guanhua Yang,
  • Xuyang Zhang,
  • Menglin Lu,
  • Yunguang Zhou

摘要

Single-crystal silicon carbide (4 H-SiC) is extensively used in power electronics due to its exceptional material characteristics. Traditional machining of 4 H-SiC is challenging, however, due to its inherent hardness and brittleness. Laser cutting, known for its precision and non-contact nature, offers a viable alternative for overcoming these limitations. Despite its potential, research on laser cutting of single-crystal silicon carbide remains limited, necessitating further investigation. In this study, 4 H-SiC wafers with a thickness of 350 μm were processed using a nanosecond ultraviolet laser with a maximum average power of 5 W. An axisymmetric heat-conduction model was formulated and solved using a Hankel transform to clarify the laser-material thermal interaction. Combined with finite-element simulation (FEM) and experimental validation, the mechanisms and cutting quality of nanosecond ultraviolet laser cutting of 4 H-SiC were investigated. The effects of average power (3–5 W), scanning speed (5–45 mm/s), repetition frequency (110–150 kHz), and number of scans (1–9) on kerf morphology and quality were systematically analyzed. A three-dimensional thermo-mechanically coupled FE model was developed to simulate the transient scanning process and kerf formation. The model was validated by single-factor experiments, and the maximum chipping width was quantitatively defined as a key quality metric. Using response-surface methodology, accurate regression models were established to capture parameter interactions and reveal their combined effects on cutting quality. The optimal laser cutting parameters were identified as 4.99 W average power, 7.06 mm/s scanning speed, 150 kHz repetition frequency, and a single scan. Under these conditions, the kerf depth reached 216.347 μm, the depth-to-width ratio was 16.077, and the chipping width was 16.898 μm. These findings provide theoretical and experimental guidance for achieving high-quality, low-damage laser cutting of single-crystal 4 H-SiC wafers.