<p>Spin caloritronics, an emerging field, deals with the transport of spin currents under the influence of a thermal gradient, and the “spin-dependent Seebeck effect” (SDSE) and spin-filtering effect are two of the most important parameters describing the relationship between the spin current and the temperature gradient. In this paper, a silicene electrode and a zigzag hexagonal boron nitride (h-BN) scattering region-based heterojunction have been proposed. This device can produce a pure spin current with minimal values of charge current. The zigzag silicene nanoribbons (ZSiNRs) are used as ferromagnetic electrodes for spin polarization and electron detection. While the scattering region made of h-BN introduces spin-scattering, we get the spin-dependent transmission at equilibrium around the Fermi level. For calculations, density functional theory (DFT) coupled with non-equilibrium Green’s function (NEGF) has been used. The results suggest that a pure spin current free from charge current is produced using the proposed device. This device has the added advantage of expected integration with already existing silicon-based devices due to the silicene-based electrodes.</p>

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Thermal gradient-driven pure spin-current generation in silicene–h-BN–silicene heterojunction analysis

  • Gul Faroz A. Malik,
  • Mubashir A. Kharadi,
  • Hilal A. Bhat,
  • Farooq A. Khanday

摘要

Spin caloritronics, an emerging field, deals with the transport of spin currents under the influence of a thermal gradient, and the “spin-dependent Seebeck effect” (SDSE) and spin-filtering effect are two of the most important parameters describing the relationship between the spin current and the temperature gradient. In this paper, a silicene electrode and a zigzag hexagonal boron nitride (h-BN) scattering region-based heterojunction have been proposed. This device can produce a pure spin current with minimal values of charge current. The zigzag silicene nanoribbons (ZSiNRs) are used as ferromagnetic electrodes for spin polarization and electron detection. While the scattering region made of h-BN introduces spin-scattering, we get the spin-dependent transmission at equilibrium around the Fermi level. For calculations, density functional theory (DFT) coupled with non-equilibrium Green’s function (NEGF) has been used. The results suggest that a pure spin current free from charge current is produced using the proposed device. This device has the added advantage of expected integration with already existing silicon-based devices due to the silicene-based electrodes.