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<p>We explore a heterojunction diode composed of <i>n</i>-type molybdenum disulfide (MoS<sub>2</sub>) and <i>p</i>-type tellurium (Te). Owing to the contrasting gate responses – strong on/off switching in wide-bandgap MoS<sub>2</sub> and weak modulation in narrow-bandgap Te – the device exhibits gate-dependent conduction characteristics. Under positive global gate voltage, electron accumulation in MoS<sub>2</sub> activates the <i>n-</i>channel, enabling forward current across the junction. Under negative gate bias, MoS<sub>2</sub> becomes depleted, limiting carrier injection and reducing the current to the pA level. Log-scale current–voltage characteristics reveal a rectification ratio up to ~ 10<sup>5</sup>, emphasizing strong gate tunability of the diode. This rectification behavior arises from the asymmetric gating response: the MoS<sub>2</sub> channel actively defines the on/off state, while Te remains conductive throughout. In contrast to conventional diodes, rectification here is not fixed by built-in potentials but instead emerges from electrostatic control over the MoS<sub>2</sub> side, eliminating the requirement for strongly gate-tunable <i>p-</i>type materials.</p>

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Electrically tunable rectifying behavior of MoS2–Te van der Waals heterodiodes with low reverse leakage current

  • 期刊论文

  • 发表日期：

    2026年1月14日

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  • Min Soo Moon,
  • Jin Young Jeong,
  • Byoung Hee Moon,
  • Soobong Choi,
  • Jung Ho Kim,
  • Gang Hee Han

摘要

We explore a heterojunction diode composed of n-type molybdenum disulfide (MoS2) and p-type tellurium (Te). Owing to the contrasting gate responses – strong on/off switching in wide-bandgap MoS2 and weak modulation in narrow-bandgap Te – the device exhibits gate-dependent conduction characteristics. Under positive global gate voltage, electron accumulation in MoS2 activates the n-channel, enabling forward current across the junction. Under negative gate bias, MoS2 becomes depleted, limiting carrier injection and reducing the current to the pA level. Log-scale current–voltage characteristics reveal a rectification ratio up to ~ 105, emphasizing strong gate tunability of the diode. This rectification behavior arises from the asymmetric gating response: the MoS2 channel actively defines the on/off state, while Te remains conductive throughout. In contrast to conventional diodes, rectification here is not fixed by built-in potentials but instead emerges from electrostatic control over the MoS2 side, eliminating the requirement for strongly gate-tunable p-type materials.