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<p>The structural, dielectric, and electrical properties of Sr(Mn<sub>0.35</sub>Fe<sub>0.15</sub>)Nb<sub>0.5</sub>O<sub>3</sub>, a material fabricated by the traditional high-temperature solid-state reaction method. X-ray diffraction (XRD) pattern confirms a tetragonal symmetry with the lattice parameters a = b = 5.6207(5) Å, c = 7.9407(5) Å and the space group as I4/m c m. The polycrystalline structure of the film is observed from scanning electron microscopy (SEM), and an average grain size of 3.34&#xa0;μm is calculated, whilst the elemental trace analysis carried out through energy dispersive X-ray spectroscopy (EDX) shows that the elements Sr, Mn, Fe, Nb, and O exist stoichiometrically in it with proper proportions. The dielectric behaviour was analysed in terms of frequency dependence, dominated by Maxwell–Wagner interfacial polarisation and space charge effects, where the dielectric constant (ε<sub>r</sub>) decreases with increasing frequency but increases with temperature. The results of impedance spectroscopy indicate the presence of relaxation processes of non-Debye type and grain–grain boundary effects, as revealed by Nyquist plots and equivalent circuit modelling analysis. The AC-conductivity characteristics agree well with Jonscher’s power law, implying the existence of correlated barrier hopping (CBH) and Quantum mechanical tunnelling (QMT) conduction mechanisms. The relatively large dielectric constant and low loss make the material potentially useful in multifunctional electronic devices.</p>

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Study of structural, microstructural, dielectric, and electrical properties of complex compound Sr (Mn0.35Fe0.15)Nb0.5O3 for electronics devices

  • 期刊论文

  • 发表日期：

    2026年1月5日

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  • Raj Mohan Mohanty,
  • Srikanta Behera,
  • Raj Kishore Mishra,
  • Sabyasachi Parida,
  • Tapan Dash

摘要

The structural, dielectric, and electrical properties of Sr(Mn0.35Fe0.15)Nb0.5O3, a material fabricated by the traditional high-temperature solid-state reaction method. X-ray diffraction (XRD) pattern confirms a tetragonal symmetry with the lattice parameters a = b = 5.6207(5) Å, c = 7.9407(5) Å and the space group as I4/m c m. The polycrystalline structure of the film is observed from scanning electron microscopy (SEM), and an average grain size of 3.34 μm is calculated, whilst the elemental trace analysis carried out through energy dispersive X-ray spectroscopy (EDX) shows that the elements Sr, Mn, Fe, Nb, and O exist stoichiometrically in it with proper proportions. The dielectric behaviour was analysed in terms of frequency dependence, dominated by Maxwell–Wagner interfacial polarisation and space charge effects, where the dielectric constant (εr) decreases with increasing frequency but increases with temperature. The results of impedance spectroscopy indicate the presence of relaxation processes of non-Debye type and grain–grain boundary effects, as revealed by Nyquist plots and equivalent circuit modelling analysis. The AC-conductivity characteristics agree well with Jonscher’s power law, implying the existence of correlated barrier hopping (CBH) and Quantum mechanical tunnelling (QMT) conduction mechanisms. The relatively large dielectric constant and low loss make the material potentially useful in multifunctional electronic devices.