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<p>Perovskite oxides exhibit unique potential in the field of broadband photodetection; however, interfacial control during silicon-based heterojunction epitaxial growth remains a significant challenge. This work constructs Nb-doped SrTiO₃ (NbSTO) heterojunctions on TiN/Si templates using pulsed laser deposition, systematically revealing the regulatory effect of deposition oxygen pressure on ultraviolet-infrared photoelectric performance. Experiments demonstrate that increasing oxygen pressure significantly suppresses dark current, but concurrently leads to an overall degradation in broadband photovoltaic sensitivity: the responsivities under 365&#xa0;nm, 532&#xa0;nm, and 808&#xa0;nm illumination decrease by factors of 2.43, 1.6, and 1.04, respectively. This performance trade-off originates from the dual effect of oxygen pressure: higher oxygen pressure enhances the crystallinity of NbSTO, but simultaneously oxidizes the TiN buffer layer to form an insulating TiNxOy interfacial phase. This insulating layer weakens the built-in electric field at the heterojunction interface, particularly impairing the carrier separation efficiency in the ultraviolet/visible region. This study not only elucidates the critical role of oxygen pressure regulation in balancing dark current and photoresponse performance within oxide heterojunctions, but also provides important guidance for the design and fabrication optimization of novel silicon-based broadband perovskite oxide photodetectors.</p>

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Effect of oxygen pressure on the photoelectric properties of NbSrTiO3/TiN/Si heteroepitaxial structures

  • 期刊论文

  • 发表日期：

    2025年10月22日

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  • Shaomin Wang,
  • Wenfeng Xiang

摘要

Perovskite oxides exhibit unique potential in the field of broadband photodetection; however, interfacial control during silicon-based heterojunction epitaxial growth remains a significant challenge. This work constructs Nb-doped SrTiO₃ (NbSTO) heterojunctions on TiN/Si templates using pulsed laser deposition, systematically revealing the regulatory effect of deposition oxygen pressure on ultraviolet-infrared photoelectric performance. Experiments demonstrate that increasing oxygen pressure significantly suppresses dark current, but concurrently leads to an overall degradation in broadband photovoltaic sensitivity: the responsivities under 365 nm, 532 nm, and 808 nm illumination decrease by factors of 2.43, 1.6, and 1.04, respectively. This performance trade-off originates from the dual effect of oxygen pressure: higher oxygen pressure enhances the crystallinity of NbSTO, but simultaneously oxidizes the TiN buffer layer to form an insulating TiNxOy interfacial phase. This insulating layer weakens the built-in electric field at the heterojunction interface, particularly impairing the carrier separation efficiency in the ultraviolet/visible region. This study not only elucidates the critical role of oxygen pressure regulation in balancing dark current and photoresponse performance within oxide heterojunctions, but also provides important guidance for the design and fabrication optimization of novel silicon-based broadband perovskite oxide photodetectors.