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<p>This research article investigates the performance implications of incorporating high-k dielectric hafnium oxide (HfO<sub>2</sub> ≈ 25) in enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) with various AlGaN barrier mole function of 0.17 and 0.25 for high-speed RF power electronics using silicon carbide (SiC) substrate. This study also explores the influence of different buffer layer materials, such as AlGaN and β-Ga<sub>2</sub>O<sub>3</sub> on device characteristics and reports a comparative analysis of DC and RF performance metrics. The use of a SiC substrate and buffer layer in GaN HEMTs significantly enhances device performance by increasing breakdown voltage, improving thermal stability, reducing defects and enhancing electron transport. The proposed heterostructure device Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN with β-Ga<sub>2</sub>O<sub>3</sub> buffer layer exhibited significantly higher drain current (I<sub>D</sub>) of 2.67 A/mm, transconductance (g<sub>m</sub>) of 1.204 S/mm, cut-off frequency (f<sub>T</sub>) of 32.4&#xa0;GHz, breakdown voltage (V<sub>BR</sub>) of 1378&#xa0;V compared to Al<sub>0.25</sub>Ga<sub>0.75</sub>N/GaN with AlGaN buffer HEMT. The proposed device drain current is 17% higher than the AlGaN buffer HEMT. The improved performance of devices with a SiC substrate and buffer layer opens new possibilities in various fields, such as power electronics, RF amplifiers, communication devices, aerospace, and defence applications.</p>

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Impact of high-k dielectrics on enhancement-mode AlGaN/GaN MISHEMTs: performance comparison with various buffer layers for RF power electronics

  • 期刊论文

  • 发表日期：

    2025年4月10日

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  • R. S. Venkatesan,
  • M. Maria Dominic Savio,
  • Ramkumar Natarajan,
  • P. Murugapandiyan

摘要

This research article investigates the performance implications of incorporating high-k dielectric hafnium oxide (HfO2 ≈ 25) in enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs) with various AlGaN barrier mole function of 0.17 and 0.25 for high-speed RF power electronics using silicon carbide (SiC) substrate. This study also explores the influence of different buffer layer materials, such as AlGaN and β-Ga2O3 on device characteristics and reports a comparative analysis of DC and RF performance metrics. The use of a SiC substrate and buffer layer in GaN HEMTs significantly enhances device performance by increasing breakdown voltage, improving thermal stability, reducing defects and enhancing electron transport. The proposed heterostructure device Al0.25Ga0.75N/GaN with β-Ga2O3 buffer layer exhibited significantly higher drain current (ID) of 2.67 A/mm, transconductance (gm) of 1.204 S/mm, cut-off frequency (fT) of 32.4 GHz, breakdown voltage (VBR) of 1378 V compared to Al0.25Ga0.75N/GaN with AlGaN buffer HEMT. The proposed device drain current is 17% higher than the AlGaN buffer HEMT. The improved performance of devices with a SiC substrate and buffer layer opens new possibilities in various fields, such as power electronics, RF amplifiers, communication devices, aerospace, and defence applications.