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<p>Here, we studied the effect of the helium ion beam irradiation on the structural and transport properties of Si-doped β-Ga<sub>2</sub>O<sub>3</sub> (Si:Ga<sub>2</sub>O<sub>3</sub>) epitaxial thin films. Epitaxial Si:Ga<sub>2</sub>O<sub>3</sub> thin films were grown on (0001) Al<sub>2</sub>O<sub>3</sub> substrates by pulsed laser deposition. Despite different Si concentrations, the films remain (−201) epitaxially oriented with respect to (0001) Al<sub>2</sub>O<sub>3</sub>. Furthermore, Helium ion beam irradiation was used to mimic massive cosmic ray (e.g., α-particle) irradiation on the structural and electronic modification. As a result, it is observed that the structural and transport properties of epitaxial Si:Ga<sub>2</sub>O<sub>3</sub> thin films were degraded owing to the He ion irradiation.</p>

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Effect of helium ion beam irradiation on the physical properties of Si-doped Ga2O3 epitaxial thin films

  • 期刊论文

  • 发表日期：

    2025年3月3日

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  • Yeongdeuk Mun,
  • Seungho Jung,
  • Hyeyun Chung,
  • Jaehoon Jeong,
  • Sangkyun Ryu,
  • Jun Kue Park,
  • Tae Eun Hong,
  • Jong Mok Ok,
  • Sungkyun Park,
  • Hyoungjeen Jeen

摘要

Here, we studied the effect of the helium ion beam irradiation on the structural and transport properties of Si-doped β-Ga2O3 (Si:Ga2O3) epitaxial thin films. Epitaxial Si:Ga2O3 thin films were grown on (0001) Al2O3 substrates by pulsed laser deposition. Despite different Si concentrations, the films remain (−201) epitaxially oriented with respect to (0001) Al2O3. Furthermore, Helium ion beam irradiation was used to mimic massive cosmic ray (e.g., α-particle) irradiation on the structural and electronic modification. As a result, it is observed that the structural and transport properties of epitaxial Si:Ga2O3 thin films were degraded owing to the He ion irradiation.