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<p>This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.</p>

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Comparative analysis of InAsP and InGaAs photodetectors for SWIR applications: photoreflectance approach and simulations

  • 期刊论文

  • 发表日期：

    2025年3月18日

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  • S. Bahareh Seyedein Ardebili,
  • Behnam Zeinalvand Farzin,
  • Jong Su Kim,
  • Sang Jun Lee

摘要

This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.