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<p>In this study, we have investigated the influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs using a β-Ga<sub>2</sub>O<sub>3</sub> buffer and substrate. By employing a range of dielectrics (SiO<sub>2</sub> (<i>ε</i><sub>r</sub> = 3.9), SiN (<i>ε</i><sub>r</sub> = 7.5), Al<sub>2</sub>O<sub>3</sub> (<i>ε</i><sub>r</sub> = 9.8), HfO<sub>2</sub> (<i>ε</i><sub>r</sub> = 25), La<sub>2</sub>O<sub>3</sub> (<i>ε</i><sub>r</sub> = 27), and TiO<sub>2</sub> (<i>ε</i><sub>r</sub> = 80)) for gate oxide and surface passivation, we aimed to explore their effects on device characteristics and identify trade-offs associated with their implementation. β-Ga<sub>2</sub>O<sub>3</sub> has a wide bandgap (4.8&#xa0;eV for β-phase), which is compatible with GaN (3.4&#xa0;eV).The β-Ga<sub>2</sub>O<sub>3</sub> substrates and the buffers can potentially be produced in larger sizes with good wafer quality and fewer defects compared to traditional GaN buffers and other substrates such as sapphire or silicon carbide (SiC). The dielectrics SiO<sub>2</sub> (TiO<sub>2</sub>) delivered a drain current of 2.54 (2.79) A/mm, a transconductance of 0.33 (0.54) S/mm, a cut-off frequency of 47 (21) GHz for a drain voltage 20&#xa0;V, an ON resistance of 1.56 (0.96)&#xa0;Ω&#xa0;mm, a breakdown voltage of 1012 (1906) V, and an intrinsic time delay of 0.84 (0.68) pico-seconds. The proposed device with a SiN (<i>ε</i><sub>r</sub> = 7.5) insulator exhibited the highest JFOM (<i>V</i><sub>BR</sub> × <i>f</i><sub>T</sub>) of 50.34 THz-V. This study paves the road for selecting the appropriate insulator for next-generation RF and power applications.</p>

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Influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs with a β-Ga2O3 buffer and substrate for RF and power applications

  • 期刊论文

  • 发表日期：

    2025年2月21日

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  • Sivamani Chinnaswamy,
  • Gowtham Palanirajan,
  • N. Vigneshwari,
  • Jayasheela Moses,
  • Ramkumar Natarajan,
  • P. Murugapandiyan

摘要

In this study, we have investigated the influence of diverse dielectric materials on the performance of enhancement-mode AlGaN/GaN MISHEMTs using a β-Ga2O3 buffer and substrate. By employing a range of dielectrics (SiO2 (εr = 3.9), SiN (εr = 7.5), Al2O3 (εr = 9.8), HfO2 (εr = 25), La2O3 (εr = 27), and TiO2 (εr = 80)) for gate oxide and surface passivation, we aimed to explore their effects on device characteristics and identify trade-offs associated with their implementation. β-Ga2O3 has a wide bandgap (4.8 eV for β-phase), which is compatible with GaN (3.4 eV).The β-Ga2O3 substrates and the buffers can potentially be produced in larger sizes with good wafer quality and fewer defects compared to traditional GaN buffers and other substrates such as sapphire or silicon carbide (SiC). The dielectrics SiO2 (TiO2) delivered a drain current of 2.54 (2.79) A/mm, a transconductance of 0.33 (0.54) S/mm, a cut-off frequency of 47 (21) GHz for a drain voltage 20 V, an ON resistance of 1.56 (0.96) Ω mm, a breakdown voltage of 1012 (1906) V, and an intrinsic time delay of 0.84 (0.68) pico-seconds. The proposed device with a SiN (εr = 7.5) insulator exhibited the highest JFOM (VBR × fT) of 50.34 THz-V. This study paves the road for selecting the appropriate insulator for next-generation RF and power applications.