Scholarlink

<p>We report the fabrication of IGZO-based resistive random-access memory (ReRAM) and discuss the improved reliability achieved with an amorphous boron nitride (a-BN) intermediate layer. The IGZO ReRAM with Ag/IGZO/ITO structure exhibited typical resistive switching behaviors. Importantly, using a-BN intermediate layer between the IGZO channel and the Ag top electrode greatly improved the device’s reliability, including long-term endurance and high-temperature stability. The impact of the a-BN intermediate layer on the conduction mechanism is analyzed using temperature-dependent double logarithm I–V analysis, and the possible mechanism for improved endurance and thermal stability is discussed.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Improving endurance and thermal stability in IGZO-based ReRAM using an a-BN intermediate layer

  • 期刊论文

  • 发表日期：

    2025年1月29日

查看全文
  • Jaewook Park,
  • Won Suk Oh,
  • Jaegoo Lee,
  • Hongseok Oh

摘要

We report the fabrication of IGZO-based resistive random-access memory (ReRAM) and discuss the improved reliability achieved with an amorphous boron nitride (a-BN) intermediate layer. The IGZO ReRAM with Ag/IGZO/ITO structure exhibited typical resistive switching behaviors. Importantly, using a-BN intermediate layer between the IGZO channel and the Ag top electrode greatly improved the device’s reliability, including long-term endurance and high-temperature stability. The impact of the a-BN intermediate layer on the conduction mechanism is analyzed using temperature-dependent double logarithm I–V analysis, and the possible mechanism for improved endurance and thermal stability is discussed.