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<p>As power electronics technology advances, power semiconductor devices perform an increasingly vital role in increasing power density, efficiency, and system integration. The intrinsic physical properties of Si limit their use as power devices in future applications. These limitations hinder the potential for further advancements in power devices, especially as demands for higher performance continue to grow. The WBG characteristics of silicon carbide (SiC) and gallium nitride (GaN) semiconductor materials have helped to revolutionize power devices. SiC and GaN are excellent choices for next-generation power devices because of their remarkable qualities, which include higher breakdown voltages, superior thermal conductivities, and faster switching speeds. The main objective of this article is to give an outline of advances in WBG materials with practical applications, as well as a description of the many challenges within the domain of WBG semiconductor power electronics. Moreover, the study also focuses on SiC, GaN, and Si power transistors that are available commercially from several reliable vendors in the voltage range of 1–10 kV.</p>

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Wide bandgap Materials: Revitalizing Power Electronics with Advances in Power Semiconductor Devices

  • 期刊论文

  • 发表日期：

    2025年2月28日

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  • Satish Kumar Sahu,
  • Saji T. Chacko,
  • Onika Parmar,
  • Amit Singh Rajput

摘要

As power electronics technology advances, power semiconductor devices perform an increasingly vital role in increasing power density, efficiency, and system integration. The intrinsic physical properties of Si limit their use as power devices in future applications. These limitations hinder the potential for further advancements in power devices, especially as demands for higher performance continue to grow. The WBG characteristics of silicon carbide (SiC) and gallium nitride (GaN) semiconductor materials have helped to revolutionize power devices. SiC and GaN are excellent choices for next-generation power devices because of their remarkable qualities, which include higher breakdown voltages, superior thermal conductivities, and faster switching speeds. The main objective of this article is to give an outline of advances in WBG materials with practical applications, as well as a description of the many challenges within the domain of WBG semiconductor power electronics. Moreover, the study also focuses on SiC, GaN, and Si power transistors that are available commercially from several reliable vendors in the voltage range of 1–10 kV.