Surface Roughness Driven Total Internal Reflection Quasi Phase Matched Broadband Second Harmonic Generation in Isotropic Semiconductor Materials
摘要
The present study analytically investigates the effect of varying surface roughness profiles on broadband second harmonic generation in reverse tapered isotropic slab configuration of ZnSe, GaAs and ZnTe crystals using total internal reflection-quasi phase matching technique. The effect of optical losses including surface roughness, absorption and scattering due to reflection has been studied. Gaussian random and non-Gaussian random rough surface profiles have been generated digitally with the help of MATLAB software, to compare different parametric variations. The simulation results show that random rough surface profile with non-Gaussian distribution has more efficiency but less bandwidth than that for rough profile with Gaussian distribution function for ZnSe and GaAs crystals. However, for ZnTe crystal, the case is reversed. The impact of varying slab length, thickness and temperature on the performance parameters have been taken into account for both the random and cumulative surface roughness profiles.