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<p>In the current study, the primary emphasis is placed on investigating the impact that annealing has on the microstructural and optical properties of ZnSe thin films on a c-plane sapphire (Al<sub>2</sub>O<sub>3</sub>) substrate. Atomic force microscopy (AFM) and X-ray diffraction (XRD) have been utilized to investigate the influence of post-growth annealing treatment on the structural and morphological characteristics of ZnSe thin films. XRD confirms the cubic crystal structure of all annealed thin films. The annealing temperature improved the crystallinity of thin films with a (111) orientation. The RMS surface roughness changed as the annealing temperature increased. From the optical measurements, ZnSe thin films annealed at 300&#xa0;°C exhibit comparably high transmittance (&gt; 68%) in the visible range with an energy band gap of 2.82&#xa0;eV. The good optical quality of ZnSe thin film after annealing makes it very suitable as a buffer layer for thin film photovoltaic (TFPV) devices.</p>

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Influence of Post-Deposition Heat Treatment on Microstructural, Topographical, and Optical Properties of ZnSe Thin Film on c-plane Sapphire Substrate

  • 期刊论文

  • 发表日期：

    2025年11月16日

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  • Pawan Kumar,
  • Prosenjit Sarkar,
  • Nisha,
  • Ram S. Katiyar

摘要

In the current study, the primary emphasis is placed on investigating the impact that annealing has on the microstructural and optical properties of ZnSe thin films on a c-plane sapphire (Al2O3) substrate. Atomic force microscopy (AFM) and X-ray diffraction (XRD) have been utilized to investigate the influence of post-growth annealing treatment on the structural and morphological characteristics of ZnSe thin films. XRD confirms the cubic crystal structure of all annealed thin films. The annealing temperature improved the crystallinity of thin films with a (111) orientation. The RMS surface roughness changed as the annealing temperature increased. From the optical measurements, ZnSe thin films annealed at 300 °C exhibit comparably high transmittance (> 68%) in the visible range with an energy band gap of 2.82 eV. The good optical quality of ZnSe thin film after annealing makes it very suitable as a buffer layer for thin film photovoltaic (TFPV) devices.