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<p>Increasing interest in AlGaN/GaN high electron mobility transistor (AG-HEMTs) has been driven by the cheap cost and scalability of Si substrates. We used TCAD program to develop and simulate the AG-HEMT on Silicon wafer. Gate length (L<sub>G</sub>) of 40&#xa0;nm and barrier thickness of 6&#xa0;nm, the structure showed the highest performance with a significant G<sub>M</sub> of 568.79 mS/mm, a substantial I<sub>DS</sub> of 1.98 A/mm, a magnificent current output of 2 A/mm, and a notable f<sub>T</sub> of 467&#xa0;GHz. The behavior improved with a gate recess of 4&#xa0;nm,&#xa0;showing&#xa0;an&#xa0;I<sub>DS</sub> of 1.98 A/mm, a transconductance of 937.02 mS/mm,&#xa0;f<sub>T</sub> of 464&#xa0;GHz, and&#xa0;high output current 2.01&#xa0;A/mm. This AG-HEMT, with optimized layer thickness, enhances RF performance without sacrificing power, making them ideal for future Radar and RF Transmitters.</p>

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Evaluating Structural Parameter Variations in AlGaN/GaN HEMTs on Si with Step-Graded InGaN Layers for future Radar and RF Transmitters

  • 期刊论文

  • 发表日期：

    2025年10月15日

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  • A. Akshaykranth,
  • J. Ajayan,
  • Sandip Bhattacharya

摘要

Increasing interest in AlGaN/GaN high electron mobility transistor (AG-HEMTs) has been driven by the cheap cost and scalability of Si substrates. We used TCAD program to develop and simulate the AG-HEMT on Silicon wafer. Gate length (LG) of 40 nm and barrier thickness of 6 nm, the structure showed the highest performance with a significant GM of 568.79 mS/mm, a substantial IDS of 1.98 A/mm, a magnificent current output of 2 A/mm, and a notable fT of 467 GHz. The behavior improved with a gate recess of 4 nm, showing an IDS of 1.98 A/mm, a transconductance of 937.02 mS/mm, fT of 464 GHz, and high output current 2.01 A/mm. This AG-HEMT, with optimized layer thickness, enhances RF performance without sacrificing power, making them ideal for future Radar and RF Transmitters.