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<p>In this work, a simulation approach was employed to provide insights into the deformation of mask openings during plasma etching under ion tilting conditions. Simulations were performed focusing on an isolated round mask opening and two widely used patterned configurations: square and hexagonal patterns. Based on analyses of the surface electric field distribution and the evolution of the opening as a function of the ion tilting angle, it is found that ion tilting significantly alters the mask opening, with deformation highly dependent on the tilting angle. This study investigates the etching performance at the mask edge and fundamental deformation mechanisms of mask openings under ion tilting, which presents a key challenge for current and next-generation etching technologies.</p>

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Insights into the Deformation of Mask Openings Under Ion Tilting During Plasma Etching

  • 期刊论文

  • 发表日期：

    2026年5月7日

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  • Peng Zhang

摘要

In this work, a simulation approach was employed to provide insights into the deformation of mask openings during plasma etching under ion tilting conditions. Simulations were performed focusing on an isolated round mask opening and two widely used patterned configurations: square and hexagonal patterns. Based on analyses of the surface electric field distribution and the evolution of the opening as a function of the ion tilting angle, it is found that ion tilting significantly alters the mask opening, with deformation highly dependent on the tilting angle. This study investigates the etching performance at the mask edge and fundamental deformation mechanisms of mask openings under ion tilting, which presents a key challenge for current and next-generation etching technologies.