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<p>Cu-Co-Sn-S (CCTS) quaternary chalcogenide thin films have received growing attention for next-generation electronic applications due to their earth-abundant constituents, tunable bandgap, and desirable thermoelectric properties. Nevertheless, the development of solution-processed CCTS films for thermistor applications has not been sufficiently explored, particularly with regard to annealing strategies that govern crystallinity, morphology, and electrical performance. In this study, we introduce a hybrid UV-thermal annealing approach for the fabrication of CCTS-based negative temperature coefficient (NTC) thermistors. Three annealing routes, namely hotplate annealing (thermal only), UV annealing (photo-activation only), and hybrid annealing (simultaneous UV + thermal), were compared. Structural characterization by X-ray diffraction (XRD) confirmed enhanced crystallinity in hybrid-annealed films, while scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) revealed improved film uniformity and stoichiometric consistency. X-ray photoelectron spectroscopy (XPS) analysis provided insight into the chemical bonding states of Cu, Co, Sn, and S under different annealing conditions. Temperature-dependent electrical measurements showed that the hybrid-annealed CCTS thermistors possessed the highest thermistor constant (B-value) and the most distinct NTC behavior, with an Arrhenius-type linear relationship between ln(R) and 1/T. These results indicate that hybrid UV-thermal annealing is an effective strategy for fabricating solution-processed CCTS thermistor devices applicable to flexible electronics.</p> Graphical Abstract <p></p>

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Synergistic UV-Thermal Activation of Solution-Processed Cu-Co-Sn-S for High-Performance Negative Temperature Coefficient Thermistors

  • 期刊论文

  • 发表日期：

    2026年7月30日

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  • Hyeon Bin Jo,
  • Nagaraju Mukurala,
  • Seongyeop Kim,
  • Taehui Na,
  • Sung Hun Jin

摘要

Cu-Co-Sn-S (CCTS) quaternary chalcogenide thin films have received growing attention for next-generation electronic applications due to their earth-abundant constituents, tunable bandgap, and desirable thermoelectric properties. Nevertheless, the development of solution-processed CCTS films for thermistor applications has not been sufficiently explored, particularly with regard to annealing strategies that govern crystallinity, morphology, and electrical performance. In this study, we introduce a hybrid UV-thermal annealing approach for the fabrication of CCTS-based negative temperature coefficient (NTC) thermistors. Three annealing routes, namely hotplate annealing (thermal only), UV annealing (photo-activation only), and hybrid annealing (simultaneous UV + thermal), were compared. Structural characterization by X-ray diffraction (XRD) confirmed enhanced crystallinity in hybrid-annealed films, while scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDS) revealed improved film uniformity and stoichiometric consistency. X-ray photoelectron spectroscopy (XPS) analysis provided insight into the chemical bonding states of Cu, Co, Sn, and S under different annealing conditions. Temperature-dependent electrical measurements showed that the hybrid-annealed CCTS thermistors possessed the highest thermistor constant (B-value) and the most distinct NTC behavior, with an Arrhenius-type linear relationship between ln(R) and 1/T. These results indicate that hybrid UV-thermal annealing is an effective strategy for fabricating solution-processed CCTS thermistor devices applicable to flexible electronics.

Graphical Abstract