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<p>Reducing contact resistance remains a critical challenge for improving the performance of two-dimensional semiconductor-based field-effect-transistors (FETs). In this study, we investigate the effect of O<sub>2</sub> plasma treatment on the metal/WS<sub>2</sub> interface and its impact on device performance. The plasma treatment induces the formation of an ultrathin WO<sub>3−x</sub> interfacial layer, effectively suppresses metal-induced gap states (MIGS) and mitigates Fermi-level pinning at the contact interface. As a result, the Schottky barrier height is significantly reduced, leading to marked improvements in charge injection and transport characteristics. The optimized WS<sub>2</sub> FET exhibited a 14.4-fold enhancement in field-effect mobility, a 799.6-fold reduction in contact resistance, and a 26.2-fold increase in on-current (I<sub>ON</sub>) compared to pristine devices. These findings demonstrate that O<sub>2</sub> plasma-induced interfacial engineering provides a scalable approach for achieving high-performance WS<sub>2</sub>–based FETs with low-contact resistance.</p> Graphical Abstract <p></p>

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Interfacial Engineering of WS₂ Thin-Film Transistors via O₂ Plasma-Induced WO3−x Buffer Layers

  • 期刊论文

  • 发表日期：

    2026年5月19日

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  • Jeonghoon Lee,
  • Dong Hyun Seo,
  • Gyeong Deok Seo,
  • TaeWan Kim

摘要

Reducing contact resistance remains a critical challenge for improving the performance of two-dimensional semiconductor-based field-effect-transistors (FETs). In this study, we investigate the effect of O2 plasma treatment on the metal/WS2 interface and its impact on device performance. The plasma treatment induces the formation of an ultrathin WO3−x interfacial layer, effectively suppresses metal-induced gap states (MIGS) and mitigates Fermi-level pinning at the contact interface. As a result, the Schottky barrier height is significantly reduced, leading to marked improvements in charge injection and transport characteristics. The optimized WS2 FET exhibited a 14.4-fold enhancement in field-effect mobility, a 799.6-fold reduction in contact resistance, and a 26.2-fold increase in on-current (ION) compared to pristine devices. These findings demonstrate that O2 plasma-induced interfacial engineering provides a scalable approach for achieving high-performance WS2–based FETs with low-contact resistance.

Graphical Abstract