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<p>Flexible electronic devices that can accommodate mechanical deformations during practical use have attracted significant attention. Oxide semiconductors offer long operational lifetimes, excellent stability, and favorable electrical properties. However, sol-gel-processed oxide semiconductors are inherently brittle and typically require high-temperature annealing at &gt; 500&#xa0;°C, which limits their integration with stretchable substrates that can withstand only 120–200&#xa0;°C. Consequently, a low-temperature transfer process is required for the application of oxide semiconductors in stretchable electronic devices. In this study, an indium gallium zinc oxide–ethylene glycol (IGZO–EG) solution was formulated by introducing EG into an IGZO metal precursor, enabling uniform thin-film formation and mechanically stable transfer under low-temperature conditions. The prepared films were transferred onto target substrates using a polydimethylsiloxane (PDMS)-based stamp transfer method. The surface chemistry and electrical properties of the IGZO–EG thin-film transistors (TFTs) before and after transfer were quantitatively investigated using X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. The results demonstrate that the PDMS-based stamp transfer process enables reliable low-temperature transfer of sol-gel-based IGZO thin films while preserving their electrical characteristics. These findings confirmed the feasibility of integrating solution-processed oxide semiconductor thin films with stretchable electronic platforms via a simple and cost-effective transfer approach.</p> Graphical Abstract <p></p>

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Low-temperature Stamp Transfer of Sol–Gel IGZO Thin Films with Preserved Electrical Properties

  • 期刊论文

  • 发表日期：

    2026年5月19日

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  • Sohee Kim,
  • Chanho Jeong,
  • Hyunjong Lee,
  • Eunki Baek,
  • Insung Choi,
  • Junyeong Hwang,
  • Sungjun Park,
  • Dongwook Kim,
  • Jaehoon Park,
  • Youngjun Yun

摘要

Flexible electronic devices that can accommodate mechanical deformations during practical use have attracted significant attention. Oxide semiconductors offer long operational lifetimes, excellent stability, and favorable electrical properties. However, sol-gel-processed oxide semiconductors are inherently brittle and typically require high-temperature annealing at > 500 °C, which limits their integration with stretchable substrates that can withstand only 120–200 °C. Consequently, a low-temperature transfer process is required for the application of oxide semiconductors in stretchable electronic devices. In this study, an indium gallium zinc oxide–ethylene glycol (IGZO–EG) solution was formulated by introducing EG into an IGZO metal precursor, enabling uniform thin-film formation and mechanically stable transfer under low-temperature conditions. The prepared films were transferred onto target substrates using a polydimethylsiloxane (PDMS)-based stamp transfer method. The surface chemistry and electrical properties of the IGZO–EG thin-film transistors (TFTs) before and after transfer were quantitatively investigated using X-ray photoelectron spectroscopy, atomic force microscopy, and electrical measurements. The results demonstrate that the PDMS-based stamp transfer process enables reliable low-temperature transfer of sol-gel-based IGZO thin films while preserving their electrical characteristics. These findings confirmed the feasibility of integrating solution-processed oxide semiconductor thin films with stretchable electronic platforms via a simple and cost-effective transfer approach.

Graphical Abstract