<p>The spontaneous polarization of ferroelectric materials enables nonvolatile behavior and the possibility of low-power logic operation through the negative capacitance effect, making ferroelectric field-effect transistors (FeFETs) attractive candidates for next-generation memory and logic applications. However, Si-based FeFETs suffer from significant limitations such as large hysteresis, short retention, limited endurance, primarily due to interfacial trap states and insufficient carrier density for polarization compensation. The adoption of two-dimensional (2D) semiconductors effectively addresses these issues by offering atomically clean interfaces, enhanced electrostatic control, and improved charge balance. As a result, the integration of ferroelectric materials with 2D materials has emerged as a promising strategy for realizing high-performance electronics. This review highlights recent advances in ferroelectric/2D heterostructures, focusing on two-terminal devices such as ferroelectric capacitors (FeCAPs) and ferroelectric tunnel junctions (FTJs), as well as three-terminal FeFETs. These device architectures are examined in terms of their applicability to nonvolatile memory and negative capacitance field-effect transistors (NC-FETs), with key device characteristics such as memory window, retention, low-power switching, and endurance discussed with material combinations and interface designs. The review aims to guide the development of scalable, reliable, and multifunctional ferroelectric devices through 2D integration.</p> Graphical Abstract <p></p>