<p>Ferroelectric thin-film transistor (FeTFT) incorporating hafnium oxide-based ferroelectric layers and oxide semiconductor channels has garnered significant attention for its potential in next-generation memory and storage applications within classical computing and emerging computing technologies such as in-memory computing and neuromorphic computing. Their characteristic nonvolatility, scalability, and high power-efficiency render FeTFT suitable for emerging data-intensive and low-power electronic applications. However, several limitations, such as insufficient polarization compensation coming from absence of minority carriers, interfacial instability owing to defects, and performance degradation under aggressive scaling, hinder their practical deployment in semiconductor industry. This review provides a critical examination of recent material and structural engineering strategies devised to overcome the aforementioned challenges. These include channel properties modulation to improve carrier mobility and efficiency of polarization-driven channel conductance modulation, incorporating interfacial layers to suppress trap states and oxygen vacancies and optimizing gate stack to enhance electrostatic control. The implications of these approaches on performance metrics including memory window, endurance, and retention characteristics are systematically discussed, alongside insights into their impact on ferroelectric switching dynamics and reliability. This work aims to offer a comprehensive perspective on the progress and future direction of oxide semiconductor-based FeTFT toward their integration into multifunctional, memory-centric electronics.</p> Graphical Abstract <p></p>