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<p>Two-dimensional transition metal dichalcogenides (TMDCs) are promising semiconductors due to their atomic thickness, excellent electrical properties, and tunable bandgaps. While chemical vapor deposition (CVD) enables high-quality TMDC growth, conventional gas-phase methods face limitations in precursor utilization and cost. Here, we demonstrate a scalable solution-based CVD method for monolayer WSe<sub>2</sub> synthesis using an aqueous ammonium metatungstate and sodium cholate precursor. Growth temperature and hydrogen partial pressure were optimized to achieve high-crystallinity films, and large-area uniform monolayers were obtained by controlling precursor film thickness. Fe doping was realized by adding FeSO<sub>4</sub> to the precursor, inducing a carrier polarity shift from ambipolar to n-type. This approach offers a versatile route for scalable synthesis and doping of TMDCs for electronic and optoelectronic applications.</p> Graphical Abstract <p></p>

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CVD Synthesis of High-quality Continuous Fe-Doped WSe2 Using a Solution-Based Precursor

  • 期刊论文

  • 发表日期：

    2025年9月30日

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  • Khalid Mehmood,
  • Ji Hwan Kim,
  • Eun Bee Ko,
  • Ho Min Kang,
  • Jun Young Ma,
  • Young Min Park,
  • Jin Ho Kim,
  • Min Gi Son,
  • Sung Jin An,
  • Hyun Ho Kim

摘要

Two-dimensional transition metal dichalcogenides (TMDCs) are promising semiconductors due to their atomic thickness, excellent electrical properties, and tunable bandgaps. While chemical vapor deposition (CVD) enables high-quality TMDC growth, conventional gas-phase methods face limitations in precursor utilization and cost. Here, we demonstrate a scalable solution-based CVD method for monolayer WSe2 synthesis using an aqueous ammonium metatungstate and sodium cholate precursor. Growth temperature and hydrogen partial pressure were optimized to achieve high-crystallinity films, and large-area uniform monolayers were obtained by controlling precursor film thickness. Fe doping was realized by adding FeSO4 to the precursor, inducing a carrier polarity shift from ambipolar to n-type. This approach offers a versatile route for scalable synthesis and doping of TMDCs for electronic and optoelectronic applications.

Graphical Abstract