<p>Halide perovskites are gaining attention as potential channel materials for field-effect transistors utilized in artificial intelligence hardware, computing arrays, and sensor grids. The ABX₃ lattice exhibits a remarkable ability to accommodate various cation and halide substitutions, effectively tuning the optical gap, minimizing defect formation, and enabling solution processing at temperatures below those that induce plastic deformation. Simultaneously, mobile ions within the lattice may drift when an electric field is applied, leading to hysteresis and threshold shifts that complicate reliable operation. This review examines three structural families: three-dimensional (3D), two-dimensional (2D), and lead-free double perovskites, and connects their composition and microstructure to electronic transport. The incorporation of mixed A-site or B-site alloys leads to an increase in vacancy formation energies. The ongoing development of FETs presents opportunities to transform the future of electronic systems. This advancement has the potential to significantly enhance the capabilities of electronic systems, making them more efficient, stable, and scalable while also boosting overall performance.</p> Graphical Abstract <p></p>