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<p>Herein, we present indium tin oxide (ITO) as a promising candidate for developing adaptable standard resistors. The ITO thin-film device structures exhibit an average resistivity of approx. 1.5 × 10<sup>–4</sup> Ω ⋅ cm, demonstrating remarkable stability in resistance values over time and showcasing temperature-independent magnetoresistance, making them reliable for various applications. ITO resistor structures were found to be optimal with an area ≥10<sup>–7</sup> cm<sup>2</sup>, without observed additional series resistance. The temperature dependence of resistance values changes by approx. 10% within a broad temperature range of 5–310&#xa0;K in a predictable and repeatable way. Unlike traditional 2D materials, ITO can be processed without the necessity of a protective layer, facilitating easier integration into electronic circuits. Moreover, ITO demonstrates single-type electron characteristics, without hole-like contributions, being particularly suitable as a charge carrier transport control. Our experimental findings indicate that resistors made of ITO-coated glass thin films present a viable alternative to standard chip-type passive components, which are commonly used in electronic devices. This work highlights the potential of ITO as a durable and flexible material for advanced electronics, enabling the design of next-generation resistive elements that can adapt to varying operational conditions.</p> Graphical Abstract <p></p>

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Adaptable Low-Temperature Resistor Standard Composed of ITO thin Film

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年2月11日

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  • Sebastian Złotnik,
  • Małgorzata Nyga,
  • Przemysław Morawiak,
  • Witold Rzodkiewicz,
  • Patryk Bruszewski,
  • Marek A. Kojdecki,
  • Jerzy Wróbel,
  • Jarosław Wróbel

摘要

Herein, we present indium tin oxide (ITO) as a promising candidate for developing adaptable standard resistors. The ITO thin-film device structures exhibit an average resistivity of approx. 1.5 × 10–4 Ω ⋅ cm, demonstrating remarkable stability in resistance values over time and showcasing temperature-independent magnetoresistance, making them reliable for various applications. ITO resistor structures were found to be optimal with an area ≥10–7 cm2, without observed additional series resistance. The temperature dependence of resistance values changes by approx. 10% within a broad temperature range of 5–310 K in a predictable and repeatable way. Unlike traditional 2D materials, ITO can be processed without the necessity of a protective layer, facilitating easier integration into electronic circuits. Moreover, ITO demonstrates single-type electron characteristics, without hole-like contributions, being particularly suitable as a charge carrier transport control. Our experimental findings indicate that resistors made of ITO-coated glass thin films present a viable alternative to standard chip-type passive components, which are commonly used in electronic devices. This work highlights the potential of ITO as a durable and flexible material for advanced electronics, enabling the design of next-generation resistive elements that can adapt to varying operational conditions.

Graphical Abstract