This paper presents a thorough investigation of AlN/<InlineEquation ID="IEq5"> <EquationSource Format="TEX">$\beta $</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq6"> <EquationSource Format="TEX">$_2$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq7"> <EquationSource Format="TEX">$_3$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>, MOSHEMTs selectively doped with silicon (Si), sulfur (S), selenium (Se), or stannum (Sn) within a precise 10 nm region of the <InlineEquation ID="IEq8"> <EquationSource Format="TEX">$\beta $</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq9"> <EquationSource Format="TEX">$_2$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq10"> <EquationSource Format="TEX">$_3$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation> channel. Leveraging the intrinsic ultra-wide bandgap of <InlineEquation ID="IEq11"> <EquationSource Format="TEX">$\beta $</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq12"> <EquationSource Format="TEX">$_2$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq13"> <EquationSource Format="TEX">$_3$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>, doping is employed to significantly boost electron charge density and elevate device performance. Our comparative study establishes silicon as the superior dopant, delivering the highest electron current density (<InlineEquation ID="IEq14"> <EquationSource Format="TEX">$\sim 6 \times 10^5$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo>∼</mo> <mn>6</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>5</mn> </msup> </mrow> </math></EquationSource> </InlineEquation> A/cm<InlineEquation ID="IEq15"> <EquationSource Format="TEX">$^2$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow /> <mn>2</mn> </mmultiscripts> </math></EquationSource> </InlineEquation>) and exceptional electron mobility exceeding 110 cm2/Vs at the heterointerface. This outstanding performance is linked to Si’s low activation energy (2.5% at <InlineEquation ID="IEq16"> <EquationSource Format="TEX">$2 \times 10^{19}$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mn>2</mn> <mo>×</mo> <msup> <mn>10</mn> <mn>19</mn> </msup> </mrow> </math></EquationSource> </InlineEquation> cm-3) and efficient carrier generation, resulting in a robust and high-density two-dimensional electron gas (2DEG) of <InlineEquation ID="IEq17"> <EquationSource Format="TEX">$10^{13}$</EquationSource> <EquationSource Format="MATHML"><math> <msup> <mn>10</mn> <mn>13</mn> </msup> </math></EquationSource> </InlineEquation> cm-2. The Si-doped MOSHEMT demonstrates remarkable DC, RF, and linearity metrics, with detailed analyses of transconductance and its higher-order derivatives (gm2, gm3) revealing dramatically reduced distortion and expanded dynamic range. These results underscore the transformative potential of Si-doped AlN/<InlineEquation ID="IEq18"> <EquationSource Format="TEX">$\beta $</EquationSource> <EquationSource Format="MATHML"><math> <mi>β</mi> </math></EquationSource> </InlineEquation>-Ga<InlineEquation ID="IEq19"> <EquationSource Format="TEX">$_2$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>2</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation>O<InlineEquation ID="IEq20"> <EquationSource Format="TEX">$_3$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mn>3</mn> <mrow /> </mmultiscripts> </math></EquationSource> </InlineEquation> MOSHEMTs as high-linearity, high-efficiency devices ready to meet the stringent demands of next-generation RF and power electronics applications.

Selective 10 nm Doping of Si, Se, S, and Sn in $\beta $-Ga₂O₃ Channel for Enhanced Linearity and Activation energy in nano-AlN/$\beta $-Ga₂O₃ MOSHEMT

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发表日期：

2026年5月26日

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Meenakshi Chauhan,
K. Jena,
Abdul Naim Khan,
T. R. Lenka

摘要

This paper presents a thorough investigation of AlN/ $\beta $ $β$ -Ga $_2$ $_{2}$ O $_3$ $_{3}$ , MOSHEMTs selectively doped with silicon (Si), sulfur (S), selenium (Se), or stannum (Sn) within a precise 10 nm region of the $\beta $ $β$ -Ga $_2$ $_{2}$ O $_3$ $_{3}$ channel. Leveraging the intrinsic ultra-wide bandgap of $\beta $ $β$ -Ga $_2$ $_{2}$ O $_3$ $_{3}$ , doping is employed to significantly boost electron charge density and elevate device performance. Our comparative study establishes silicon as the superior dopant, delivering the highest electron current density ( $\sim 6 \times 10^5$ $\sim 6 \times 10^{5}$ A/cm $^2$ $^{2}$ ) and exceptional electron mobility exceeding 110 cm²/Vs at the heterointerface. This outstanding performance is linked to Si’s low activation energy (2.5% at $2 \times 10^{19}$ $2 \times 10^{19}$ cm^-3) and efficient carrier generation, resulting in a robust and high-density two-dimensional electron gas (2DEG) of $10^{13}$ $10^{13}$ cm^-2. The Si-doped MOSHEMT demonstrates remarkable DC, RF, and linearity metrics, with detailed analyses of transconductance and its higher-order derivatives (g_m2, g_m3) revealing dramatically reduced distortion and expanded dynamic range. These results underscore the transformative potential of Si-doped AlN/ $\beta $ $β$ -Ga $_2$ $_{2}$ O $_3$ $_{3}$ MOSHEMTs as high-linearity, high-efficiency devices ready to meet the stringent demands of next-generation RF and power electronics applications.

Selective 10 nm Doping of Si, Se, S, and Sn in \(\beta \)-Ga2O3 Channel for Enhanced Linearity and Activation energy in nano-AlN/\(\beta \)-Ga2O3 MOSHEMT

摘要

Selective 10 nm Doping of Si, Se, S, and Sn in \(\beta \)-Ga₂O₃ Channel for Enhanced Linearity and Activation energy in nano-AlN/\(\beta \)-Ga₂O₃ MOSHEMT