Scholarlink

<p>The study demonstrates that thermal annealing induces significant, irreversible changes in the luminescent properties of colloidal CdTe/SiO₂ quantum dots (QDs). Annealing at moderate temperatures (80–110&#xa0;°C) enhances photoluminescence (PL) intensity by up to 6% and achieves exceptional color purity of 96–99%, attributed to surface trap state reduction. However, temperature treatment above 110&#xa0;°C degrades PL intensity due to SiO₂ shell deterioration and nanoparticle aggregation, resulting in a 110&#xa0;nm irreversible PL red shift and complete loss of the absorption excitonic feature at 150&#xa0;°C. Importantly, cyclic annealing at 100&#xa0;°C (two cycles) enables a controlled 58&#xa0;nm red shift while preserving high PL intensity and color purity (98%), outperforming the single-stage high-temperature annealing. The results indicate that the relaxation dynamics of excited states in CdTe/SiO<sub>2</sub> QDs during thermal annealing are affected by two opposing processes. At moderate temperatures, trap passivation and improved lattice ordering enhance luminescence, while at elevated temperatures, shell deterioration and nanoparticle aggregation lead to emission degradation. These results establish an optimized thermal protocol for tuning emission wavelength and enhancing color purity without compromising luminescence efficiency, advancing CdTe/SiO₂ QDs for red-emitting optoelectronic applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of Thermal Annealing on Luminescence Properties of Colloidal CdTe/SiO2 Quantum Dots

  • 期刊论文

  • 发表日期：

    2026年1月30日

查看全文
  • D. S. Daibagya,
  • S. A. Ambrozevich,
  • A. V. Osadchenko,
  • I. A. Zakharchuk,
  • A. S. Selyukov,
  • M. S. Smirnov,
  • O. V. Ovchinnikov

摘要

The study demonstrates that thermal annealing induces significant, irreversible changes in the luminescent properties of colloidal CdTe/SiO₂ quantum dots (QDs). Annealing at moderate temperatures (80–110 °C) enhances photoluminescence (PL) intensity by up to 6% and achieves exceptional color purity of 96–99%, attributed to surface trap state reduction. However, temperature treatment above 110 °C degrades PL intensity due to SiO₂ shell deterioration and nanoparticle aggregation, resulting in a 110 nm irreversible PL red shift and complete loss of the absorption excitonic feature at 150 °C. Importantly, cyclic annealing at 100 °C (two cycles) enables a controlled 58 nm red shift while preserving high PL intensity and color purity (98%), outperforming the single-stage high-temperature annealing. The results indicate that the relaxation dynamics of excited states in CdTe/SiO2 QDs during thermal annealing are affected by two opposing processes. At moderate temperatures, trap passivation and improved lattice ordering enhance luminescence, while at elevated temperatures, shell deterioration and nanoparticle aggregation lead to emission degradation. These results establish an optimized thermal protocol for tuning emission wavelength and enhancing color purity without compromising luminescence efficiency, advancing CdTe/SiO₂ QDs for red-emitting optoelectronic applications.