This work investigates a novel two-dimensional anti-dot superlattice MOSFET, analyzing the impact of its geometric parameters on electronic transport and switching performance. Through quantum transport simulations based on the Non-Equilibrium Green’s Function (NEGF) formalism, various superlattice configurations (e.g., 5 × 5 and 6 × 5 anti-dot arrays) have been tested to evaluate key metrics including the energy-dependent transmission, subthreshold swing (SS), ON/OFF current ratio, transconductance ( \({g}_{m}\) ), and cutoff frequency ( \({f}_{T}\) ). These analysis’s reveal that the periodic nanopatterning induces minibands and minigaps in the electronic structure, which function as an efficient energy filter to suppress high-energy carrier injection. This mechanism enables the \(6 \times 5\) device to achieve an ultra-steep subthreshold swing of \(8.4 \text{mV}/\text{dec}\) , surpassing the Boltzmann limit, alongside an ON/OFF ratio exceeding 103. Furthermore, the design exhibits high transconductance and an intrinsic cutoff frequency of \(2.42 \times {10}^{16} \text{Hz}\) . The regular understanding obtained is that the 2D superlattice geometry provides a powerful and viable pathway to decouple the traditional trade-off between low-voltage operation and high-performance switching, offering a new design principle for next-generation, energy-efficient transistors.
