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<p>Lead-free perovskite materials have emerged as promising alternatives to lead-based counterparts, driving advancements in perovskite solar cells (PSCs). Among these, CsGeI<sub>3</sub> has demonstrated significant potential as an environmentally sustainable candidate, offering cost-effectiveness, high efficiency, and excellent thermal stability. This study proposes a novel PSC structure incorporating lead-free CsGeI<sub>3</sub> and explores the use of various organic and inorganic electron transport layers (ETLs) and hole transport layers (HTLs) to optimize device functionality and maximize power conversion efficiency (PCE). The FTO/ETL/CsGeI<sub>3</sub>/Spiro-OMeTAD/Ag device was designed and simulated using SCAPS-1D. Comprehensive simulations assessed the performance of multiple ETL materials (C<sub>60</sub>, CdS, CdZnS, IGZO, PCBM, SnO<sub>2</sub>, TiO<sub>2</sub>, ZnOS, ZnSe, WO<sub>3</sub>, ZnO, and WS<sub>2</sub>) paired with HTLs (Spiro-OMeTAD, P3HT, PEDOT:PSS, Cu<sub>2</sub>O, CuI, CuO, CuSCN, and NiO). Optimization of key parameters, including the ETL and HTL thicknesses, doping concentrations, defect densities, series and shunt resistances, and back electrode work function, significantly enhanced device performance. The analysis identified ZnOS as the optimal ETL and CuSCN as the ideal HTL, achieving an optimized PSC with a V<sub>OC</sub> of 1.1610 V, J<sub>SC</sub> of 23.10 mA/cm<sup>2</sup>, FF of 85.35%, and a PCE of 22.89%. These findings underscore the potential of CsGeI<sub>3</sub>-based PSCs for sustainable and high-performance solar energy applications.</p>

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Performance Optimization of an Inorganic Lead-Free CsGeI3 Based Perovskite Solar Cells by SCAPS-1D Simulation

  • 期刊论文

  • 发表日期：

    2025年8月18日

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  • Salah Eddine Boussaada,
  • Younes Mouchaal

摘要

Lead-free perovskite materials have emerged as promising alternatives to lead-based counterparts, driving advancements in perovskite solar cells (PSCs). Among these, CsGeI3 has demonstrated significant potential as an environmentally sustainable candidate, offering cost-effectiveness, high efficiency, and excellent thermal stability. This study proposes a novel PSC structure incorporating lead-free CsGeI3 and explores the use of various organic and inorganic electron transport layers (ETLs) and hole transport layers (HTLs) to optimize device functionality and maximize power conversion efficiency (PCE). The FTO/ETL/CsGeI3/Spiro-OMeTAD/Ag device was designed and simulated using SCAPS-1D. Comprehensive simulations assessed the performance of multiple ETL materials (C60, CdS, CdZnS, IGZO, PCBM, SnO2, TiO2, ZnOS, ZnSe, WO3, ZnO, and WS2) paired with HTLs (Spiro-OMeTAD, P3HT, PEDOT:PSS, Cu2O, CuI, CuO, CuSCN, and NiO). Optimization of key parameters, including the ETL and HTL thicknesses, doping concentrations, defect densities, series and shunt resistances, and back electrode work function, significantly enhanced device performance. The analysis identified ZnOS as the optimal ETL and CuSCN as the ideal HTL, achieving an optimized PSC with a VOC of 1.1610 V, JSC of 23.10 mA/cm2, FF of 85.35%, and a PCE of 22.89%. These findings underscore the potential of CsGeI3-based PSCs for sustainable and high-performance solar energy applications.