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<p>We have been studying the structural and defect properties of Cu<sub>2</sub>NiX (X = SSe, Te<sub>2</sub>, SeTe) chalcogenide semiconductors synthesized by the Bridgman–Stockbarger method using positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation spectroscopy (DBAS). These methods let us study defect configurations in great detail. These configurations include vacancies, clusters, and interstitials, which are affected by atomic radii and bonding properties. PALS measurements show variations in defect types and concentrations among the samples. This helps us identify three distinct lifetime components (τ<sub>1</sub>, τ<sub>2</sub>, τ<sub>3</sub>) and their corresponding intensities. We found that Cu₂NiTe₂ had the highest τ₂ (288&#xa0;ps) and pore volume (0.056&#xa0;nm<sup>3</sup>). DBAS measurements showed that the Cu₂NiTe₂ compound had the highest defect concentration. DBAS gave us some great insights into the electron momentum distribution and showed us the role of chalcogen substitution in defect evolution. All of these findings show how well Cu₂NiX materials can be used to optimize their structural properties for optoelectronic and energy applications.</p>

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Defect Characterization in Cu2NiX (X = SSe, Te2, SeTe) Chalcogenide Semiconductors Using Positron Annihilation Spectroscopy

  • 期刊论文

  • 发表日期：

    2025年5月30日

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  • S. F. Samadov,
  • Kh. M. Guliyeva,
  • A. A. Sidorin,
  • N. V. M. Trung,
  • Y. I. Aliyev,
  • O. S. Orlov,
  • S. H. Jabarov

摘要

We have been studying the structural and defect properties of Cu2NiX (X = SSe, Te2, SeTe) chalcogenide semiconductors synthesized by the Bridgman–Stockbarger method using positron annihilation lifetime spectroscopy (PALS) and Doppler broadening annihilation spectroscopy (DBAS). These methods let us study defect configurations in great detail. These configurations include vacancies, clusters, and interstitials, which are affected by atomic radii and bonding properties. PALS measurements show variations in defect types and concentrations among the samples. This helps us identify three distinct lifetime components (τ1, τ2, τ3) and their corresponding intensities. We found that Cu₂NiTe₂ had the highest τ₂ (288 ps) and pore volume (0.056 nm3). DBAS measurements showed that the Cu₂NiTe₂ compound had the highest defect concentration. DBAS gave us some great insights into the electron momentum distribution and showed us the role of chalcogen substitution in defect evolution. All of these findings show how well Cu₂NiX materials can be used to optimize their structural properties for optoelectronic and energy applications.