<p>A simple incipient wet impregnation approach was used to prepare ruthenium doped SiO₂ nanocomposite. This research looks at the X-ray diffraction (XRD), transmission electron microscopy (TEM), ac conductivity (<i>π</i>′), and dielectric properties of Ru/SiO₂ and SiO₂ that haven’t been doped with any metals. At 22.4°, the XRD peak that is unique to SiO₂ was seen in both amorphous SiO₂ and Ru/SiO₂. Because of the Ru dopants, there was no other XRD peak. TEM tests show that Ru-doped SiO₂ has a size distribution of spherical particles with a width of about 2&#xa0;nm. Dielectric characteristics were extracted from 2 to 1000&#xa0;kHz, as well as room temperature impedance spectra. The dielectric constant and ac conductivities of Ru-doped SiO₂ were higher than those of undoped SiO₂. The frequency-dependent conductivity profiles were interpreted using Jonscher’s power law with a temperature-dependent exponent, demonstrating that small polaron hopping is involved in conduction. Furthermore, the decrease in the dielectric constant observed at higher frequencies may be linked to the dipoles’ reduced reaction to the applied electric field. The dielectric constant of Ru/SiO₂ is increased at lower frequencies, mostly due to interfacial polarization. As the temperature goes up, the peak maximum of the imaginary part of the electric modulus as a function of frequency moves toward higher frequencies. This proves that dielectric relaxation is linked to dipolar polarization. Overall, the data revealed improved dielectric performance, specifically at room temperature, making Ru/SiO₂ a viable dielectric material for capacitors and dielectric applications. Future research will examine how varying Ru concentrations affect the thermal stability and catalytic efficiency of nanocomposites, as well as the feasibility of scaling up Ru/SiO₂ synthesis for industrial use.</p>